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Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector

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Abstract

A physical model-based simulation is conducted to investigate the design of an efficient high-speed quantum-well waveguide-photodetector (WGPD). The WGPD structure is optimized in terms of photoabsorber thickness, i-region thickness, cladding doping and thickness. The carrier transit-time and device capacitance effect are reduced for a WGPD by employing a \(\le\) 50 nm thin-photoabsorber in a 0.66 \(\mu\)m thick i-region design. A three-fold improvement in responsivity up to 0.82 A/W is obtained by using two graded-index layers. The accurately positioned TPA layer in a thick i-region can provide up to 50 % increase in bandwidth of 65 GHz for a 25 \(\mu\)m long WGPD. The optimized WGPD design can achieve 3-dB bandwidth over 80 and 50 GHz for 25 and 50 \(\mu\)m long WGPD, respectively. The device satisfies the requirements of high-speed, low dark current, high responsivity, and integration capabilities, which is an essential prerequisite for high-performance detectors in future optical communication systems.

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  1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India

    Dharmander Malik & Utpal Das

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  1. Dharmander Malik
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  2. Utpal Das
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Conceptualization, investigation and writing: Dharmander Malik, Supervision: Utpal Das.

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Correspondence to Dharmander Malik.

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Malik, D., Das, U. Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector. Opt Quant Electron 55, 353 (2023). https://doi.org/10.1007/s11082-023-04619-w

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