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Sub-bandgap photo-response of Mo-hyperdoped black silicon MSM photodetectors

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Abstract

The molybdenum-hyperdoped black silicon materials were fabricated by using femtosecond laser pulses. The energy level of molybdenum in bandgap of silicon was determined by temperature-dependent Hall effect measurements. By introducing intermediate band in the bandgap of silicon, molybdenum-hyperdoped black silicon materials showed thermally stable absorption to photons with energy below the bandgap of silicon (0.5–1.1 eV). We studied current–voltage characteristics of metal-black silicon-metal photodetectors prepared using molybdenum hyperdoped black silicon. The lateral structural photodetectors showed an observable photo-response to the infrared photon. The room-temperature responsivity of 25.1 mA/W at 0.95 eV was obtained.

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Funding

This work was supported by National Natural Science Foundation of China (NSFC) under Grants # 62275098 and #61775077.

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Authors and Affiliations

  1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China

    Yang Yang, Zhe-Yi Ren, Chao Li & Ji-Hong Zhao

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  1. Yang Yang
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  2. Zhe-Yi Ren
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  3. Chao Li
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  4. Ji-Hong Zhao
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Contributions

YY prepared Figs. 3, 4 and 5. Z-YR prepared Figs. 1 and 2. CL analysed the experimental results. J-HZ and YY wrote the main manuscript text. All authors reviewed the manuscript.

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Correspondence to Ji-Hong Zhao.

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Yang, Y., Ren, ZY., Li, C. et al. Sub-bandgap photo-response of Mo-hyperdoped black silicon MSM photodetectors. Opt Quant Electron 55, 259 (2023). https://doi.org/10.1007/s11082-023-04556-8

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