Abstract
The impact of trapping on the optical properties of Gallium Nitride (GaN) Light Emitting Diodes (LED) has been analyzed in this work. The analysis is carried out by using Technology Computer Aided Design (TCAD) physical simulator. GaN LED with four quantum Wells have been considered with donor trap density ranging from 5 × 1015 cm−3 to 1 × 1019 cm−3. Polarization, radiative recombination and Auger recombination models were used in the simulation. The TCAD simulation results indicate that luminous power and quantum efficiency of GaN LEDs decreases with increase of trap density.
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This work is supported by Karunya Institute of Technology and Sciences, Coimbatore, India.
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Manikandan, M., Nirmal, D., Ajayan, J. et al. Numerical investigation of traps and optical response in III-V nitride quantum LED. Opt Quant Electron 52, 513 (2020). https://doi.org/10.1007/s11082-020-02633-w
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DOI: https://doi.org/10.1007/s11082-020-02633-w