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Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma

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Abstract

The promising fields of gallium oxide application are the production of hybrid cars, electrical equipment of high-power, ultraviolet radiation sensors and uninterruptible power supplies. However, the main factor hindering its massive commercial use is the lack of synthesis technologies, that should be cheap, reproducible, and scalable. In this work we develop a novel plasma-chemical method of Ga2O3 synthesis. The high-purity elemental gallium was used as the precursor, which was delivered by argon flow to the reaction zone, where the interaction with iodide pentoxide took place. RF (40.68 MHz) non-equilibrium plasma discharge at low pressure (0.1 Torr) was employed for the initiation of interactions between precursors. Optical Emission Spectroscopy in tandem with quantum-chemical calculations allowed us to find out the reactive species formed in the plasma discharge. The properties of the solid phase obtained were studied as well.

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Acknowledgements

The reported study was supported by Russian Science Foundation, Grant № 19-19-00510 “Development of a Novel Plasma Enhanced Vapor Phase Method for Deposition of Gallium Oxide Films for Applications in High-power Electronics and in UV Schottky Diodes”.

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Authors and Affiliations

  1. Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Nizhny Novgorod, Russia

    Leonid Mochalov, Alexander Logunov, Igor Prokhorov & Vladimir Vorotyntsev

  2. University of North Carolina at Charlotte, Charlotte, USA

    Leonid Mochalov

  3. University of Oslo, Oslo, Norway

    Daniela Gogova

  4. Lobachevsky University, Nizhny Novgorod, Russia

    Sergey Zelentsov, Nikolay Starostin & Aleksey Letnianchik

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  1. Leonid Mochalov
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  2. Alexander Logunov
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Mochalov, L., Logunov, A., Gogova, D. et al. Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma. Opt Quant Electron 52, 510 (2020). https://doi.org/10.1007/s11082-020-02625-w

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