Abstract
By numerical investigation of various structures, we have proposed a promising single quantum well device for efficient green InGaN-based light-emitting diodes. The peak internal quantum efficiency of the proposed structure, at lower current density, is enhanced and shows significant droop reduction at high current density. The efficiency droop ratio of the proposed structure is ~ 31% at 100 A cm−2. Similarly, the light output power is also doubled as compared to conventional light-emitting diode. In the proposed structure, the simultaneously graded quantum well and electron blocking layer are employed. Therefore, the injection of holes into the active region becomes easier due to graded electron blocking layer and radiative recombination is boosted due to graded quantum well. By implement the proposed structure, both the problem of injection of holes and separation of electron–hole wavefunctions are greatly reduced.
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References
Chang, J.Y., Kuo, Y.K.: Advantages of blue In G a N light-emitting diodes with composition-graded barriers and electron-blocking layer. Physica Status Solidi (a) 210(6), 1103–1106 (2013)
Chang, S.-J., et al.: 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes. IEEE J. Sel. Top. Quantum Electron. 8(4), 744–748 (2002)
Chang, L.-B., Lai, M.-J., Lin, R.-M., Huang, C.-H.: Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes. Appl. Phys. Express 4(1), 012106 (2011)
Crawford, M.H.: LEDs for solid-state lighting: performance challenges and recent advances. IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009)
Dadgar, A., et al.: Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers. Appl. Phys. Lett. 102(6), 062110 (2013)
der Maur, M.A., Lorenz, K., Di Carlo, A.: Band gap engineering approaches to increase InGaN/GaN LED efficiency. Opt. Quant. Electron. 44(3–5), 83–88 (2012)
Der Maur, M.A., Pecchia, A., Penazzi, G., Rodrigues, W., Di Carlo, A.: Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations. Phys. Rev. Lett. 116(2), 027401 (2016)
Gardner, N., et al.: Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A cm 2. Appl. Phys. Lett. 91(24), 243506 (2007)
Han, S.-H., et al.: Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells. J. Phys. D Appl. Phys. 43(35), 354004 (2010)
Karpov, S.: ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review. Opt. Quant. Electron. 47(6), 1293–1303 (2015)
Lee, Y.-J., Chen, C.-H., Lee, C.-J.: Reduction in the efficiency-droop effect of InGaN green light-emitting diodes using gradual quantum wells. IEEE Photonics Technol. Lett. 22(20), 1506–1508 (2010)
Lin, G.-B., Meyaard, D., Cho, J., Fred Schubert, E., Shim, H., Sone, C.: Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency. Appl. Phys. Lett. 100(16), 161106 (2012)
Massabuau, F.-P., et al.: The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Appl. Phys. Lett. 105(11), 112110 (2014)
Nanhui, N., et al.: Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction. Solid-state Electron. 51(6), 860–864 (2007)
O’donnell, K., Auf der Maur, M., Di Carlo, A., Lorenz, K.: It’s not easy being green: strategies for all-nitrides, all-colour solid state lighting. Physica Status Solidi Rapid Res. Lett. 6(2), 49–52 (2012)
Ryou, J.-H., et al.: Control of quantum-confined stark effect in InGaN-based quantum wells. IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009)
Sheu, J.-K., Chi, G., Jou, M.: Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer. IEEE Photonics Technol. Lett. 13(11), 1164–1166 (2001)
Steranka, F., et al.: High power LEDs–Technology status and market applications. Physica Status Solidi (a) 194(2), 380–388 (2002)
Usman, M., Kim, H., Shim, J.-I., Shin, D.-S.: Measurement of piezoelectric field in single-and double-quantum-well green LEDs using electroreflectance spectroscopy. Jpn. J. Appl. Phys. 53(9), 098002 (2014)
Usman, M., Saba, K., Jahangir, A., Kamran, M., Muhammad, N.: Electromechanical fields and their influence on the internal quantum efficiency of GaN-based light-emitting diodes. Acta Mech. Solida Sin. 31(3), 383–390 (2018a)
Usman, M., Saba, K., Han, D.-P., Muhammad, N.: Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer. Superlattices Microstruct. 113, 585–591 (2018b)
Usman, M., Anwar, A.-R., Munsif, M., Malik, S., Islam, N.U.: Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes. Superlattices Microstruct. 135, 106271 (2019a)
Usman, M., et al.: Zigzag-shaped quantum well engineering of green light-emitting diode. Superlattices and Microstructures 132, 106164 (2019b)
Usman, M., Munsif, M., Anwar, A.-R., Jamal, H., Malik, S., Islam, N.U.: Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer. Superlattices Microstruct. 139, 106417 (2020a)
Usman, M., Munsif, M., Anwar, A.-R.: Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes. Opt. Commun. 464, 125493 (2020b)
Verzellesi, G., et al.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114(7), 101 (2013)
Wang, T., Bai, J., Sakai, S., Ho, J.: Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes. Appl. Phys. Lett. 78(18), 2617–2619 (2001)
Wang, L., et al.: High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes. Appl. Phys. Lett. 95(21), 211104 (2009)
Wang, C., et al.: Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer. Appl. Phys. Lett. 97(26), 261103 (2010)
Zakheim, D., Pavluchenko, A., Bauman, D., Bulashevich, K., Khokhlev, O., Karpov, S.Y.: Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling. Physica Status Solidi (a) 209(3), 456–460 (2012)
Zhang, N., et al.: Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes. Appl. Phys. Lett. 100(5), 053504 (2012)
Zhang, Z.-H., et al.: InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination. Appl. Phys. Lett. 105(3), 033506 (2014)
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The authors are obliged to Higher Education Commission of Pakistan and Semiconductor Photonics Laboratory, Hanyang University, South Korea for lending technical support for this work.
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Usman, M., Anwar, AR., Munsif, M. et al. Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer. Opt Quant Electron 52, 303 (2020). https://doi.org/10.1007/s11082-020-02423-4
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DOI: https://doi.org/10.1007/s11082-020-02423-4