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Numerical simulation of multilayer organic light-emitting diodes with host–guest emissive layer: the role of defect states

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Abstract

In this study, a comprehensive model for the numerical simulation of electrical and optical characteristics of multilayer organic light-emitting devices (OLED) is presented. The model consists of three parts: charge carrier transport model, exciton model, and a post-processing part for calculating luminance. The defect states in the organic layers are modeled and are introduced into the equations. For demonstrating the rule of the defect states in such devices, a multilayer OLED is considered consisting of a host–guest emissive layer sandwiched between electron and hole transport layers. The current density and luminance results of the analyzed device are compared with the experimental data. We have found that by considering the defect states, there is good accordance between the simulation results and the experimental data.

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Authors and Affiliations

  1. Faculty of Science, Malek Ashtar University of Technology, Shahin-Shahr, Iran

    Pezhman Sheykholeslami Nasab, Mahdi Davoudi Darareh & Mohammad Hassan Yousefi

  2. Department of Electroceramics and Electrical Engineering, Malek Ashtar University of Technology, Shahin-Shahr, Iran

    Ali Rostamnejadi

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  1. Pezhman Sheykholeslami Nasab
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  2. Mahdi Davoudi Darareh
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  3. Mohammad Hassan Yousefi
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  4. Ali Rostamnejadi
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Correspondence to Mahdi Davoudi Darareh.

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Sheykholeslami Nasab, P., Davoudi Darareh, M., Yousefi, M.H. et al. Numerical simulation of multilayer organic light-emitting diodes with host–guest emissive layer: the role of defect states. Opt Quant Electron 52, 271 (2020). https://doi.org/10.1007/s11082-020-02387-5

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