Abstract
Schottky barrier height (SBH), \(\varphi\), plays a crucial role in the design of electronic and photo-electronic devices. In order to reckon SBH via internal photoemission (IPE), the technique is through extrapolating square root of IPE yield-and cube root of IPE yield-photon energy plots to zero before this work, this work was motivated by the most reliable and precise model to determine the SBH via IPE. A phenomenological model for connection IPE quantum yield and photon energy has been successfully established based on Fermi–Dirac distribution. The results of experimental observations fitted via the model indicate that the modeled quantum yield agrees well with experimental data. This model emphasizes the threshold of photon energy for calculating SBH, and the SBH of InN/GaN, p-type GaP/p-type Si, Pt/GaP, Au/GaAs, Si/SiO2 and Cu/SiO2 were obtained with high reliability after the method had been applied.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Afanas’ev, V.V., Stesmans, A.: Polytype determination at the SiC–SiO2 interface by internal electron photoemission scattering spectroscopy. Mater. Sci. Eng. B 102(1–3), 308–312 (2003)
Afanas’ev, V.V., Stesmans, A.: Internal photoemission at interfaces of high-κ insulators with semiconductors and metals. J. Appl. Phys. 102, 081301 (2007)
Afanas’ev, V.V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., Mahony, A., Povey, I.M., Pemble, M.E., Connor, E., Hurley, P.K., Newcomb, S.B.: Band offsets at interfaces of (100)InxGa1−xAs (0 ≤ x ≺ 0.53) with Al2O3 and HfO2. Microelectron Eng 86(7–9), 1550–1553 (2009)
Afanasev, V.V., Badylevich, M., Houssa, M., Stesmans, A., Aggrawal, G., Campbell, S.A.: Electron energy band alignment at the NiO/SiO2 interface. Appl. Phys. Lett. 96, 172105 (2010)
Afanas’ev, V.V., Chou, H.Y., Stesmans, A., Merckling, C., Sun, X.: Band offsets at the (100) GaSb/Al2O3 interface from internal electron photoemission study. Microelectron. Eng. 88(7), 1050–1053 (2011)
Almeida, J., Dell’Orto, T., Coluzza, C., Margaritondo, G., Bergoss, O., SpajeT, M., Coujon, D.: Novel spectromicroscopy: Pt–GaP studies by spatially resolved internal photoemission with near-field optics. Appl. Phys. Lett. 69, 2361 (1996)
Aslan, B., Turan, B., Liu, H.C., Baribeau, J.M., Buchanan, M., Chow-Chong, P.: Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors. Appl. Phys. B 78, 225–228 (2004)
Aslan, B., Turan, R., Liu, H.C.: Study on the long wavelength SiGe/Si hetero-junction internal-photoemission infrared photodetectors. Infrared Phys. Technol. 47(1–2), 195–205 (2005)
Coluzza, C., Tuncel, E., Staehli, J.-L., Baudat, P.A., Margaritondo, G., McKinley, J.T., Barnes, A.A.V., Albridge, R.G., Tolk, N.H., Martin, D., Morier-Genoud, F., Dupuy, C., Rudra, A., Ilegems, M.: Interface measurements of hetero-junction band lineups with the Vanderbilt free-electron laser. Phys. Rev. B 46, 12834 (1992)
Falub, M.C., Shi, M., Krempasky, J., Hricovini, K., Mukovskii, Y.M., Neumann, M., Galakhov, V.R., Patthey, L.: Photonenergy dependent photoemission study of La0.7Sr0.3MnO3. Surf. Sci. 575(1–2), 29–34 (2005)
Felnhofer, D., Gusev, E.P., Jamison, P., Buchanan, D.A.: Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission. Microelectron. Eng. 80, 58–61 (2005)
Fowler, R.H.: The analysis of photoelectrical sensitivity curves for clean metals at various temperatures. Phys. Rev. 38, 45–56 (1931)
Heiblum, M., Nathan, M.I., Eizenberg, M.: Energy band discontinuities in hetero-junctions measured by internal photoemission. Surf. Sci. 174, 318–319 (1986)
Kittel, C.: Introduction to Solid State Physics, 7th edn, pp. 216–218. Wiley (ASIA), Singapore (1996)
Mahmood, Z.H.: Determination of InN–GaN heterostructure band offsets from internal photoemission measurements. Appl. Phys. Lett. 91(15), 152108–152111 (2007)
Okumura, T., Tu, K.N.: Electrical characterization of Schottky contacts of Au, Al, Gd, and Pt on n-type and p-type GaAs. J. Appl. Phys. 61, 2955 (1987)
Powell, R.J.: Interface barrier energy determination from voltage dependence of photoinjected currents. J. Appl. Phys. 41, 2424 (1970)
Sakata, I., Yamanaka, M., Kawanami, H.: Characterization of hetero-junctions in crystalline-silicon-based solar cells by internal photoemission. Sol. Energy Mater. Sol. Cells 93(6–7), 737–741 (2009)
Willisa, B.G., Langb, D.V.: Oxidation mechanism of ionic transport of copper in SiO2 dielectrics. Thin Solid Films 467, 284–293 (2004)
Wu, R., Schmidt, M., Schopke, A., Fuhs, W.: Solid-phase epitaxy of CaSi2 on Si(111) and the Schottky-barrier height of CaSi2/Si(111). Appl. Surf. Sci. 190, 437–440 (2002)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Changshi, L. The Most Reliable and Precise Model to Determine Schottky Barrier Height and Photoelectron Yield Spectroscopy. Opt Quant Electron 51, 370 (2019). https://doi.org/10.1007/s11082-019-2088-1
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-019-2088-1