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Studying thermal performance of the PIN-photodiode photodetectors based on MGL and GNR

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Abstract

The novel approach proposed in the present study is to use graphene based materials in the structure of the available infrared photo detectors in order to improve their parameters. The photo detector under study is PIN photodiode photodetector with no internal gain, but a very wide wavelength. In this paper, we have shown that the graphene-based detectors can exhibit high responsivity and detectivity at elevated temperatures in a wide radiation spectrum due to high values of the quantum efficiency and relatively low rates of thermo generation which lead them to surpass other detectors substantially.

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Authors and Affiliations

  1. Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran

    S. R. Hoseini & H. Rasooli Saghai

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  1. S. R. Hoseini
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  2. H. Rasooli Saghai
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Correspondence to H. Rasooli Saghai.

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Hoseini, S.R., Rasooli Saghai, H. Studying thermal performance of the PIN-photodiode photodetectors based on MGL and GNR. Opt Quant Electron 49, 172 (2017). https://doi.org/10.1007/s11082-017-1010-y

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