Abstract
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes with different density and size of V-shaped pits are numerically investigated. Simulation results show that internal quantum efficiency is firstly enhanced and then reduced with an increase in the density and size of pits. It is found that the area ratio of pits accounting for the last QW is the key factor. The optimal value of area ratio is about 50 % at the current density of 35A/cm2.
Similar content being viewed by others
References
Abell, J., Moustakas, T.D.: The role of dislocations as nonradiative recombination centers in InGaN quantum wells. Appl. Phys. Lett. 92, 091901 (2008)
Chang, C.Y., Li, H., Shih, Y.T., Lu, T.C.: Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells. Appl. Phys. Lett. 106, 091104 (2015)
Cho, Y., Kim, J., Kim, J., Shim, M., Hwang, S., Park, S., Park, Y., Kim, S.: Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well. Appl. Phys. Lett. 103, 261101 (2013)
David, A., Grundmann, M.J.: Droop in InGaN light-emitting diodes: a differential carrier lifetime analysis. Appl. Phys. Lett. 96, 103504 (2010)
Fang, Z.: Significant increase of light emission efficiency by in situ site-selective etching of InGaN quantum wells. J. Appl. Phys. 106, 023517 (2009)
Fiorentini, V., Bernardini, F., Ambacher, O.: Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204–1206 (2002)
Han, S., Lee, D., Shim, H., Lee, J.W., Kim, D., Yoon, S., Kim, Y.S., Kim, S.: Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 102, 251123 (2013)
Hangleiter, A., Hitzel, F., Netzel, C., Fuhrmann, D., Rossow, U., Ade, G., Hinze, P.: Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys. Rev. Lett. 95, 127402 (2005)
Kim, J., Kim, J., Tak, Y., Chae, S., Kim, J., Park, Y.: Effect of V-shaped pit size on the reverse leakage current of InGaN/GaN light-emitting diodes. Electron Device Lett. IEEE 34, 1409–1411 (2013)
Kim, J., Cho, Y., Ko, D., Li, X., Won, J., Lee, E., Park, S., Kim, J., Kim, S.: Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells. Opt. Express 22, A857–A866 (2014)
Le, L.C., Zhao, D.G., Jiang, D.S., Li, L., Wu, L.L., Chen, P., Liu, Z.S., Li, Z.C., Fan, Y.M., Zhu, J.J.: Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes. Appl. Phys. Lett. 101, 252110 (2012)
Li, X., Okur, S., Zhang, F., Avrutin, V., Ozgur, U., Morkoc, H., Hong, S.M., Yen, S.H., Hsu, T.S., Matulionis, A.: Impact of active layer design on InGaN radiative recombination coefficient and LED performance. J. Appl. Phys. 111, 063112 (2012)
Li, Y., Yun, F., Su, X., Liu, S., Ding, W., Hou, X.: Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes. J. Appl. Phys. 116, 123101 (2014)
Liu, J., Feng, F., Zhou, Y., Zhang, J., Jiang, F.: Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate. Appl. Phys. Lett. 99, 111112 (2011)
Liu, C., Ren, Z., Chen, X., Zhao, B., Wang, X., Yin, Y., Li, S.: Study of InGaN/GaN light emitting diodes with step-graded electron blocking layer. IEEE Photonics Technol. Lett. 26, 134–137 (2014)
Mo, W., Fang, Y., Pu, H., Liu, Jiang, F.: Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD. J. Cryst. Growth 285, 312–317 (2005)
Netzel, C., Bremers, H., Hoffmann, L., Fuhrmann, D., Rossow, U., Hangleiter, A.: Emission and recombination characteristics of GaInN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits. Phys. Rev. B 76, 155322 (2007)
Okada, N., Kashihara, H., Sugimoto, K., Yamada, Y., Tadatomo, K.: Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes. J. Appl. Phys. 117, 025708 (2015)
Piprek, J.: Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions. Appl. Phys. Lett. 104, 051118 (2014)
Piprek, J.: How to decide between competing efficiency droop models for GaN-based lightemitting diodes. Appl. Phys. Lett. 107, 031101 (2015)
Qiu, W., Hu, W.: Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors. Sci. China Phys. Mech. Astron. 58, 027001 (2015)
Quan, Z.J., Wang, L., Zheng, C.D., Liu, J.L., Jiang, F.Y.: Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J. Appl. Phys. 116, 183107 (2014)
Rosner, S.J., Carr, E.C., Ludowise, M.J., Girolami, G., Erikson, H.I.: Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition. Appl. Phys. Lett. 70, 420–422 (1997)
Schwarz, U.T., Kneissl, M.: Nitride emitters go nonpolar. Phys. Stat. Sol. (RRL) 1(3), A44–A46 (2007)
Shen, Y.C., Mueller, G.O., Watanabe, S., Gardner, N.F., Munkholm, A., Krames, M.R.: Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91, 141101 (2007)
Tomiya, S., Kanitani, Y., Tanaka, S., Ohkubo, T., Hono, K.: Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits. Appl. Phys. Lett. 98, 181904 (2011)
Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101 (2013)
Vurgaftman, I., Meyer, J.R.: Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94, 3675–3696 (2003)
Wang, K.A., Lian, C., Su, N., Jena, D., Timler, J.: Conduction band offset at the In N/Ga N heterojunction. Appl. Phys. Lett. 91, 232117 (2007)
Wang, X., Hu, W., Chen, X., Lu, W.: The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans. Electron Devices 59, 1393–1401 (2012)
Wu, X., Liu, J., Quan, Z., Xiong, C., Zheng, C., Zhang, J., Mao, Q., Jiang, F.: Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl. Phys. Lett. 104, 221101 (2014)
Xia, C.S., Li, Z.M.S., Sheng, Y.: On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes. Appl. Phys. Lett. 103, 233505 (2013)
Acknowledgments
The authors acknowledge the support from National Natural Science Foundation of China (Grant No. 11364034 and No. 61334001), the Key Technology Research and Development Program of Jiangxi province (No. 20141BBE50035 and 20151BBE50111).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Quan, Z.J., Liu, J.L., Fang, F. et al. Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes. Opt Quant Electron 48, 195 (2016). https://doi.org/10.1007/s11082-016-0464-7
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11082-016-0464-7