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Modeling of dark characteristics for long-wavelength HgCdTe photodiode

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Abstract

A data-processing approach has been developed to obtain device parameters from resistance–voltage (R–V) characteristics measured on long-wavelength HgCdTe n-on-p photodiodes. A simple carrier density approximation is proposed to take account of carrier degeneracy and conduction band non-parabolicity into its physical model. Some basic parameters and their estimated errors can be extracted from the measured R–V curves. The method is applied to fit the R–V curves measured at different temperatures. We also analyze larger amount of long-wavelength HgCdTe n-on-p photodiodes, and obtain statistical device parameters.

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu Tian Road, Shanghai, China, 200083

    Z. J. Quan, X. S. Chen, W. D. Hu, Z. H. Ye, X. N. Hu, Z. F. Li & W. Lu

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  1. Z. J. Quan
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  2. X. S. Chen
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  3. W. D. Hu
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  4. Z. H. Ye
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  5. X. N. Hu
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  6. Z. F. Li
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  7. W. Lu
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Correspondence to X. S. Chen.

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Quan, Z.J., Chen, X.S., Hu, W.D. et al. Modeling of dark characteristics for long-wavelength HgCdTe photodiode. Opt Quant Electron 38, 1107–1113 (2006). https://doi.org/10.1007/s11082-006-9046-4

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  • DOI: https://doi.org/10.1007/s11082-006-9046-4

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