Skip to main content
SpringerLink
Log in

Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

The effect of In-segregation on optical properties in 7.5-nm GaInNAs/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (0.39, 0.03) for the emission wavelengths around 1.3 and 1.55 μm, respectively. Muraki’s model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and subband energy levels of the QW are calculated using multi-band effective mass theory. We show a space-indirect transition between light holes localized in indium deficient region and electrons localized in indium rich region of the quantum well. Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • Ben-Daniel D.J., Duke C.B, (1996). Phys. Rev. 152: 638

    Google Scholar 

  • Chuang S.L. (1995). Physics of Optoelectronic devices. John Wiley, New York

    Google Scholar 

  • Duboz J.Y., Gupta J.A, Wasilewski Z.R, Ramsey J., Williams R.L, Aers G.C, Riel B.J, Sproule G.I (2002). Phys. Rev. B 66: 085313

    Article  ADS  Google Scholar 

  • Egorov A.Yu., Odonobludov V.A, Mamutin V.V, Zhukov A.E, Tsatsu’nikov A.F., Kryzhanovskaya N.V, Ustinov V.M, Hong Y.G, C.W. (2003). Tu Journal of crystal growth 251: 417–421

    Article  Google Scholar 

  • Hetterich M., Dawson M.D, Ergov A.Yu., Bernklau D., Riechert H. (2000). Appl. Phys. Lett. 76: 1030

    Article  ADS  Google Scholar 

  • Kim K., Lambrecht W.R.L, Segall B., (1996). Phys. Rev. B 53: 16310

    Article  ADS  Google Scholar 

  • Kondow M., Nakatasuka S., Kitakani T., Yazawa Y., Okai M. (1996). Jpn. J. Appl. Phys. part1 35: 5711

    Article  Google Scholar 

  • Li E.H., (1999). Phys. E Amsterdam 5, 215

    Google Scholar 

  • Liu H.F., Xiang N., Chua S.J. (2006). Appl. Phys. Lett. 89: 071905

    Article  Google Scholar 

  • Meney A.T., O’Reilly E.P., Adams A.R (1996). Semicond. Sci. Technol. 11, 897

    Article  ADS  Google Scholar 

  • Moison J.M., Guille C., Hauzay F., Barthe F., Van Rompay M. (1989). Phys. Rev. B 40: 6149

    Article  ADS  Google Scholar 

  • Muraki K., Fukatsu S., Shiraki Y. (1992). Appl. Phys. Lett. 61: 557

    Article  ADS  Google Scholar 

  • Park S.H., Chuang S.L (2000). J. Appl. Phys. 87: 353

    Article  ADS  Google Scholar 

  • Rubini S., Bais G., Cristofoli A., Piccin M., Duca R., Nacci C., Modesti S., Carlino E., Martelli F., Franciosi A., Bisognin G., De Salvador D., Schiavuta P., Berti M., Drigo A.V (2006). Appl. Phys. Lett. 88: 141923

    Article  Google Scholar 

  • Schowalter M., Rosenauer A., Gerthsen D. (2006). Appl. Phys. Lett. 88: 111906

    Article  Google Scholar 

  • Sopanen M., Xin H.P, Tu C.W (2000). Appl. Phys. Lett. 76: 994

    Article  ADS  Google Scholar 

  • Strite S., Chandrasekhar D., Smith D.J, Sariel J., Chen H., Teraguchi N., Morkoc H. (1993). J. Cryst. Growth 127: 204

    Article  Google Scholar 

  • Vurgaftman I., Meyer J.R (2001). J. Appl. Phys 89: 5815

    Article  ADS  Google Scholar 

  • Vurgaftman I., Meyer J.R (2003). J. Appl. Phys. 94: 3675

    Article  ADS  Google Scholar 

  • Wright A.F. (1997). J. Appl. Phys. 82: 2833

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Centre for optoelectronics, Department of Electrical and computer engineering, National University of Singapore, Singapore, 117576, Singapore

    V. Dixit, H. F. Liu & N. Xiang

Authors
  1. V. Dixit
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. F. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Xiang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. Dixit.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Dixit, V., Liu, H.F. & Xiang, N. Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron. Opt Quant Electron 38, 963–972 (2006). https://doi.org/10.1007/s11082-006-9042-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11082-006-9042-8

Keywords

Search

Navigation