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Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Band structures of GaN0.58y As1–1.58y Bi y /GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L W and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L W , y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.

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Authors and Affiliations

  1. Faculty of Sciences, Unité de Recherche sur les Hetero-Epitaxies et Applications, University of Monastir, 5019, Monastir, Tunisia

    A. Ben Nasr, M. M. Habchi, C. Bilel, A. Rebey & B. El Jani

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  1. A. Ben Nasr
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  2. M. M. Habchi
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  3. C. Bilel
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  4. A. Rebey
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  5. B. El Jani
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Correspondence to A. Rebey.

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Ben Nasr, A., Habchi, M.M., Bilel, C. et al. Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm. Semiconductors 49, 593–599 (2015). https://doi.org/10.1134/S1063782615050048

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  • DOI: https://doi.org/10.1134/S1063782615050048

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