Abstract
An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
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Passaro, V.M.N., de Passaro, F. All-optical AND gate based on Raman effect in silicon-on-insulator waveguide. Opt Quant Electron 38, 877–888 (2006). https://doi.org/10.1007/s11082-006-9021-0
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DOI: https://doi.org/10.1007/s11082-006-9021-0