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Firing activity in an N-type locally active memristor-based Hodgkin–Huxley circuit

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Abstract

Hodgkin–Huxley (HH) circuit can reproduce abundant neuronal firing activities, but it is hard to physically implement the HH circuit. To solve this issue, an implementable HH circuit with two N-type locally active memristors (LAMs) to respectively characterize its \({\textrm{Na}}^+\) and \({\textrm{K}}^+\) channels is proposed in this paper. Numerical explorations demonstrate that the N-type LAM-based Hodgkin–Huxley (N-LAM-HH) circuit can effectively generate periodic and chaotic firing activities. Moreover, a PCB-based hardware circuit is physically implemented and experimental measurement is performed. The experimentally captured time-domain waveforms of chaotic and periodic firing activities well confirm the numerical explorations. These verify the feasibility of the LAM in characterizing \({\textrm{Na}}^+\) and \({\textrm{K}}^+\) channels and the availability of the N-LAM-HH circuit in generating firing activities, which can assist us in building the memristor-based neuromorphic hardware and exploring spike-based applications

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

This work was supported by the National Natural Science Foundations of China under Grant Nos. 12172066, 52307002, the Natural Science Foundation of Jiangsu Province, China, under Grant No. BK20230628, the Project 333 of Jiangsu Province, the Scientific Research Foundation of Jiangsu Provincial Education Department, China, under Grant 23KJB120002, and Centre for Nonlinear Systems, Chennai Institute of Technology, India, vide funding number CIT/CNS/2024/RP/012.

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Authors and Affiliations

  1. School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213159, China

    Quan Xu, Yujian Fang, Chengtao Feng, Mo Chen & Ning Wang

  2. Centre for Nonlinear Systems, Chennai Institute of Technology, Chennai, 600069, Tamil Nadu, India

    Fatemeh Parastesh

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  1. Quan Xu
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  2. Yujian Fang
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  3. Chengtao Feng
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Contributions

Q. Xu: Methodology, formal analysis, writing—original draft. Y. Fang: Formal analysis. C. Feng: Writing—review and editing. F. Parastesh: Software. M. Chen: Writing—review and editing. N. Wang: Supervision, project administration Writing—review and editing.

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Correspondence to Ning Wang.

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Xu, Q., Fang, Y., Feng, C. et al. Firing activity in an N-type locally active memristor-based Hodgkin–Huxley circuit. Nonlinear Dyn (2024). https://doi.org/10.1007/s11071-024-09728-z

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