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Deep ultraviolet detectors based on wide bandgap semiconductors: a review

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Abstract

Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.

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Funding

1.Natural Science Foundation of Heilongjiang province, China(NO.YQ2021F012). 2.National Natural Science Foundation of China(NO.62074046).

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Authors and Affiliations

  1. MEMS Center, Harbin Institute of Technology, Harbin, 150001, China

    Jiandong Hao, Ling Li, Xiangqian Jiang, Chuncheng Ban & Ningqiang Shi

  2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin, 150001, China

    Ling Li

  3. Solar Cell Research Laboratory, Tianjin Institute of Power Sources, Tianjin, 300381, China

    Peng Gao

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  1. Jiandong Hao
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  2. Ling Li
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  3. Peng Gao
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Correspondence to Ling Li.

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Hao, J., Li, L., Gao, P. et al. Deep ultraviolet detectors based on wide bandgap semiconductors: a review. J Nanopart Res 25, 81 (2023). https://doi.org/10.1007/s11051-023-05694-6

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