Abstract
Single-gallium antimonide (GaSb)-nanowire-based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate (PET) substrates, both of which exhibited high responsivity, fast-response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of λ = 350 nm and light intensity P = 0.2 mW/cm2, while the flexible device displays higher detectivity of 9.67 × 109 jones at 700 nm than the rigid one and lower noise equivalent power (NEP, \( {\text{NEP}}_{{700\;{\text{nm}}}}^{*} \) = 2.0 × 10−12 W/Hz1/2) for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (61377033, 91123008). We thanked Institute of Materials of Ningbo University of Technology and Engineering Research Center for Semiconductor Integrated Technology of Institute of Semiconductors for the samples measurements.
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Luo, T., Liang, B., Liu, Z. et al. Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response. Sci. Bull. 60, 101–108 (2015). https://doi.org/10.1007/s11434-014-0687-6
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DOI: https://doi.org/10.1007/s11434-014-0687-6