Abstract
Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp2Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp2Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp2Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.
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This research was supported by the KACST-Intel Consortium Center of Excellence in Nano-manufacturing Application (CENA) under the signed joint research and academic advising agreement between KACST and Monastir University.
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Ezzedini, M., Sfaxi, L. & M’Ghaieth, R. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE. J Nanopart Res 19, 19 (2017). https://doi.org/10.1007/s11051-016-3713-6
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DOI: https://doi.org/10.1007/s11051-016-3713-6