Abstract
Undoped and doped indium tin oxide (ITO) with different concentrations (2, 4, and 6 mol%) of different dopants (CuO, Cr2O3, and ZrO2) were prepared in the nano-size scale (19–33 nm) using Pechini method. The thermal decomposition of the precursors was studied. The electrical properties of all the prepared samples were investigated. All the investigated systems have higher conductivity than that of ITO. For ITO doped with CuO, as the concentration of CuO increases, the conductivity increases. The highest conductivity was obtained for ITO doped with 6 mol% of CuO. For ITO doped with Cr2O3, as the concentration of Cr2O3 increases the conductivity increases and above 4 mol% Cr2O3 the conductivity decreases. For ITO doped with ZrO2, as the ZrO2 concentration increases, the conductivity increases up to 4 mol% of ZrO2 and then decreases. The band gap was detected for all the investigated systems.
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H. A. A. is grateful to Prof. Dr. Ahmad M. Hashim for his fruitful discussions.
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Abbas, H.A., Youssef, A.M., Hammad, F.F. et al. Electrical properties of nano-sized indium tin oxide (ITO) doped with CuO, Cr2O3 and ZrO2 . J Nanopart Res 16, 2518 (2014). https://doi.org/10.1007/s11051-014-2518-8
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DOI: https://doi.org/10.1007/s11051-014-2518-8