A prototype standard sample GSO 10030-2011 for the stepped parameters of thin layers of single crystal silicon is developed and certified. It is intended for calibration of transmission electron microscopes at magnifications of 1000–1,500,000×. The certified parameters are the step size of the stepped structure and the distance between the (111) planes of the single crystal silicon in this material. Both parameters are independently traceable to the unit of length, the meter.
Similar content being viewed by others
References
L. M. Utevskii, Diffraction Electron Microscopy in Metallurgy [in Russian], Metallurgiya, Moscow (1973).
D. Williams and C. Carter, Transmission Electron Microscopy: A Textbook for Materials Science, Springer Science + Business Media, NY (2009).
Yu. A. Novikov et al., “Linear gauge in the micrometer and nanometer ranges for scanning electron and atomic-force microscopy,” in: Trudy IOFAN (2006), Vol. 62, pp. 36–76.
NIST 2008 SRM 2000, Calibration Standard for High-Resolution x-Ray Diffraction, pp. 1–11.
GOST R 8.631-2007, GSI. Electron Measurement Microscopes. Verification Technique.
GOST R 8.629-2007, GSI. Relief Gauges in the Nanometer Range with Trapezoidal Element Profiles. Verification Technique.
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izmeritel’naya Tekhnika, No. 10, pp. 16–18, October, 2012.
Rights and permissions
About this article
Cite this article
Bodunov, D.S., Gavrilenko, V.P., Zablotskii, A.V. et al. Standard sample for calibration of transmission electron microscopes nanometrology. Meas Tech 55, 1137–1140 (2013). https://doi.org/10.1007/s11018-012-0098-5
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11018-012-0098-5