A new instrument which enables the resistivity distribution over the surface of a wafer of single-crystal silicon with a diameter of up to 200 mm to be measured is described. The measurement is based on the fourprobe method.
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Deceased. (E. F. Grinin)
Translated from Izmeritel’naya Tekhnika, No. 5, pp. 51–53, May, 2010.
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Vladimirov, V.M., Grinin, E.F., Sergii, M.E. et al. An instrument for measuring the electrical resistivity of single-crystal silicon by a four-probe method. Meas Tech 53, 538–541 (2010). https://doi.org/10.1007/s11018-010-9539-1
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DOI: https://doi.org/10.1007/s11018-010-9539-1