Features of the Experimental Results When Measuring the Charge Center Density Distribution in the Active Region of a p-n-Junction with a Latent Inverse Layer by the Dynamic Capacitance Method

Abstract

A dynamic barrier capacitance method is described for measuring the distribution density of fixed electrically active centers in the relatively lightly doped region of barrier structures such as p-n-junctions, Schottky barriers and MOD-structures with averaging of the density over the depth of the profile up to 1 nm. It is shown that the presence of latent inverse layers in the active region of the barrier structures leads to an inadequate experimental result of the charge center distribution with respect to the true distribution. The proposed method enables the latent inverse layer in the active region of the barrier structures to be revealed.