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Thermal properties of some organosilicon precursors for chemical vapor deposition

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Abstract

Five volatile organosilicon compounds: trimethyl(phenyl)silane Me3SiC6H5 (I), trimethyl(cyclohexyl)silane Me3SiC6H11 (II), trimethyl(phenoxy)silane Me3SiOC6H5 (III), trimethyl(cyclohexyloxy)silane Me3SiOC6H11 (IV), and trimethyl(allyloxy)silane Me3SiOC3H5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas–liquid chromatography; and 1H NMR, 13C NMR, 29Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me3SiOC6H5, Me3SiC6H5, Me3SiC6H11, Me3SiOC6H11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me3SiOC3H5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II–V were determined for the first time.

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Acknowledgements

We thank N. I. Alferova (NIIC SB RAS, Novosibirsk, Russia) for registering FTIR spectra. This work was partially supported by The Russian Foundation for Basic Research (Grant No. 13-03-01198).

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 3 Acad. Lavrentiev Ave., Novosibirsk, Russia, 630090

    E. N. Ermakova, S. V. Sysoev, R. E. Nikolaev, L. D. Nikulina, P. E. Plyusnin & M. L. Kosinova

  2. Favorskii Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, 1 Favorskii Str., Irkutsk, Russia, 664033

    A. V. Lis, I. P. Tsyrendorzhieva & V. I. Rakhlin

  3. Novosibirsk State University, 2 Pirogova Str., Novosibirsk, Russia, 630090

    P. E. Plyusnin

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  1. E. N. Ermakova
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Correspondence to E. N. Ermakova.

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Ermakova, E.N., Sysoev, S.V., Nikolaev, R.E. et al. Thermal properties of some organosilicon precursors for chemical vapor deposition. J Therm Anal Calorim 126, 609–616 (2016). https://doi.org/10.1007/s10973-016-5563-y

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  • DOI: https://doi.org/10.1007/s10973-016-5563-y

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