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Formation process of indium oxide transparent conducting films via thermal decomposition

Nanostructure observation of dip-coated films during electron-beam irradiation

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Abstract

Indium 2-ethylhexanoate monohydroxide, In(OH)(O2CCH(CH2CH3)(CH2)3CH3)2, is a precursory material to fabricate In2O3-based transparent conducting films by dip-coating process. Formation process of indium oxide transparent conducting films was investigated using an ultra-low acceleration voltage FE-SEM. The nanostructure change of the precursory layer was observed during the electron beam irradiation in vacuum. A flat and homogeneous surface of the as-coated layer changed to porous and net-work like nanostructure after 80 s; the pore diameter increased and the pore distance decreased although the number of pores remained unchanged. These processes were interpreted as the preliminary step to form porous films composed of nm-sized inter-linked oxide particles as reported in the previous papers by the authors.

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Authors and Affiliations

  1. Tokyo Polytechnic University, Kanagawa, Japan, 243-0297, 1583 Iiyama, Atsugi

    Sawada Y. & Nakazaki S.

  2. Carl Zeiss Co. Ltd., Tokyo, Japan, 160-0003, 22 Honshio-machi, Shinjyuku

    Tachibana S.

  3. Kanagawa University, Kanagawa, Japan, 259-1293, 2946 Tsuchiya, Hiratsuka

    Nishimoto Y.

  4. SONY Institute of Higher Education, Kanagawa, Japan, 243-8501, 428 Nurumizu, Atsugi

    Ozao R.

Authors
  1. Sawada Y.
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  2. Nakazaki S.
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  3. Tachibana S.
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  4. Nishimoto Y.
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  5. Ozao R.
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Correspondence to Sawada Y..

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Sawada, Y., Nakazaki, S., Tachibana, S. et al. Formation process of indium oxide transparent conducting films via thermal decomposition. J Therm Anal Calorim 85, 57–60 (2006). https://doi.org/10.1007/s10973-005-7348-6

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  • DOI: https://doi.org/10.1007/s10973-005-7348-6

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