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Structural and dielectric properties of boron-doped and un-doped mullite thin films

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Abstract

A sol–gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 °C for un-doped and at 350 °C for doped mullite films. Small crystallite size ~11 nm and low dielectric value ~5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, ~6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.

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Acknowledgments

The authors would like to offer their thanks to Advanced Photonic Science Institute, University Technology Malaysia and Centre of Excellence in Solid State Physics, Punjab University, for effort in the research progress.

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Authors and Affiliations

  1. Advanced Photonic Science Institute, Nanotechnology Research Alliance, Universiti Teknologi Malaysia, 81310, Skudai, Johor Bahru, Malaysia

    Shumaila Islam & Rosly Abdul Rahman

  2. Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310, Skudai, Johor Bahru, Malaysia

    Zulkafli Ottoman

  3. Centre of Excellence in Solid State Physics, University of the Punjab, QAC, Lahore, 54590, Pakistan

    Saira Riaz & Shahzad Naseem

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  1. Shumaila Islam
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  2. Saira Riaz
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  3. Rosly Abdul Rahman
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  4. Shahzad Naseem
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  5. Zulkafli Ottoman
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Correspondence to Rosly Abdul Rahman.

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Islam, S., Riaz, S., Rahman, R.A. et al. Structural and dielectric properties of boron-doped and un-doped mullite thin films. J Sol-Gel Sci Technol 74, 368–377 (2015). https://doi.org/10.1007/s10971-014-3475-5

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  • DOI: https://doi.org/10.1007/s10971-014-3475-5

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