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The influence of processing parameters on the fabrication of Si3N4 wires

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Abstract

Silicon nitride (Si3N4) wires have been prepared by means of carbothermal reduction followed by the nitridation (CTRN) of silica gel containing ultrafine decomposed saccharose. The influence of temperature of reaction and mass ratio of carbon to silicon \( \left( \frac{C}{Si} \right) \) on the synthesis of Si3N4 wires were studied. The presence of nitrogen gas in the pores of gel at high temperature starts the CTRN reaction leading to the formation of Si3N4 wires. The results show that the Si3N4 was fully formed with two kinds of morphologies including globular and wire with a width of 100–500 nm and length of several microns at sintering temperature of 1,400 °C by employing the mass ratio of \( \frac{C}{Si} \; = \;0.5 \). The infrared adsorption of the wires exhibits absorption bands related to the absorption peaks of Si–N bond of Si3N4. The thermal analysis results reveal that carbothermal nitridation reaction was completed at temperature of 1,400 °C.

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Authors and Affiliations

  1. Materials Engineering Department, Malek Ashtar University of Technology, Shahin Shahr, Iran

    Zahra Omidi, Ali Ghasemi & Saeed Reza Bakhshi

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  1. Zahra Omidi
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  2. Ali Ghasemi
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  3. Saeed Reza Bakhshi
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Correspondence to Zahra Omidi.

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Omidi, Z., Ghasemi, A. & Bakhshi, S.R. The influence of processing parameters on the fabrication of Si3N4 wires. J Sol-Gel Sci Technol 64, 245–250 (2012). https://doi.org/10.1007/s10971-012-2853-0

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  • DOI: https://doi.org/10.1007/s10971-012-2853-0

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