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Preparation and photoelectric properties of mesoporous ZnO films

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Abstract

Mesoporous ZnO films doped with Ti4+ (M-ZnO) have been prepared by doping process and sol–gel method. The films have mesoporous structures and consist of nano-crystalline phase, as evidenced from small angle X-ray diffraction and high resolution transmission electron microscopy. The wide angle X-ray diffraction of M-ZnO films confirms that M-ZnO has hexagonal wurtzite structure and ternary ZnTiO3 phases. Ultraviolet–visible transmittance spectra, absorbance spectra and energy gaps of the films were measured. The Eg of M-ZnO is 3.25 eV. Photoluminescence intensity of M-ZnO centered at 380 nm increases obviously with the excitation power, which is due to the doping process and enhanced emission efficiency. M-ZnO thin films display a positive photovoltaic effect compared to mesoporous TiO2 (M-TiO2) films.

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Acknowledgments

The work was supported by Innovation Program of Shanghai Municipal Education Commission (08YZ08), AM and other Research Foundation of Shanghai City Committee of Science and Technology (08520741600, 0752nm016, 07JC14058) and Shanghai Leading Academic Disciplines (S30107). We thank Dr. Qiang Li, Bo Lu and Jian Huang for their assistance in the measurement at Shanghai University.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China

    Ming Ming Wu, Yue Shen, Feng Gu, Yi An Xie, Jian Cheng Zhang & Lin Jun Wang

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  1. Ming Ming Wu
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  2. Yue Shen
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  3. Feng Gu
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  4. Yi An Xie
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  5. Jian Cheng Zhang
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Correspondence to Yue Shen.

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Wu, M.M., Shen, Y., Gu, F. et al. Preparation and photoelectric properties of mesoporous ZnO films. J Sol-Gel Sci Technol 53, 470–474 (2010). https://doi.org/10.1007/s10971-009-2099-7

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