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Significant suppression of leakage current in (Ba x ,Sr1-x )TiO3/MgO heterostructured thin films by thin MgO layers insertion

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Abstract

The leakage behavior and dielectric property of BST80/MgO heterostructured thin films deposited on LaNiO3 (LNO)/Si substrates by sol-gel were investigated. The dielectric constant and the leakage current are modified by MgO insertion. The dramatic reduction in the leakage current effectively increased the charge retention of the capacitors consisted of heterostructured thin films as compared to the pure BST films. The significant reduction in the leakage current can be attributed to the minute solid solubility of MgO in the BST lattice and the potential barrier built in the interface between BST and MgO layers in the heterostructured thin films.

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Acknowledgments

The authors appreciate the financial support of the Teaching and Research Award Program for Outstanding Young Teachers in High Education Institutions of MOE, China.

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Authors and Affiliations

  1. School of Physics Science and Technology, Lanzhou University, Lanzhou, 730000, China

    Jianfeng Jia, Kai Huang, Qingtao Pan & Deyan He

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  1. Jianfeng Jia
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  2. Kai Huang
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  3. Qingtao Pan
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  4. Deyan He
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Jia, J., Huang, K., Pan, Q. et al. Significant suppression of leakage current in (Ba x ,Sr1-x )TiO3/MgO heterostructured thin films by thin MgO layers insertion. J Sol-Gel Sci Technol 42, 9–12 (2007). https://doi.org/10.1007/s10971-006-1519-1

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  • DOI: https://doi.org/10.1007/s10971-006-1519-1

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