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Preparation and Properties of FeGa/AlN Magnetoelectric Device with Typical Topological Structures

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Abstract

In this work, the mask method is applied to design a variety of topological structures in the magnetic layer. Different topological Mo/FeGa/AlN magnetoelectric (ME) devices were fabricated. Controlling the stress conduction mode between the magnetostrictive phase and the piezoelectric phase is one of the goals that enables the coexistence of normal stress and shear stress. In order to improve the ME performance of devices, the second purpose is to induce the ME anisotropy of devices through the magnetostrictive anisotropy caused by the topological structure. The circular topological Mo/FeGa/AlN devices produce the largest ME coupling coefficient along the length direction (7071 mV/cm Oe), which is 1.84 times higher than that of the planar devices (3853 mV/cm Oe). The maximum ME anisotropy coefficient (4.612) is determined from the strip topology ME device, which is 2.45 times higher than that of the planar device.

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All data generated or used during the study appear in the submitted article.

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Funding

This work was supported by the Fundamental Research Funds for the Central Universities (FRF-GF-19-028B) and the State Key Laboratory for Advanced Metals and Materials (2018Z-26).

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Authors and Affiliations

  1. State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China

    Xiao Zhang, Fan Li, Tianxin Wu & Jie Zhu

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  1. Xiao Zhang
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  2. Fan Li
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Correspondence to Jie Zhu.

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Zhang, X., Li, F., Wu, T. et al. Preparation and Properties of FeGa/AlN Magnetoelectric Device with Typical Topological Structures. J Supercond Nov Magn 36, 1025–1032 (2023). https://doi.org/10.1007/s10948-023-06539-y

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  • DOI: https://doi.org/10.1007/s10948-023-06539-y

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