Abstract
The structural stability, electronic structure, and magnetic and optical properties of intrinsic arsenene, Mn-doped, and Mn-X (X = B, C, N, O, and F) co-doped (X atoms replace three As atoms around Mn atoms) arsenene were studied using the GGA + U plane wave super soft pseudopotential method in the framework of spin density-generalized theory. Intrinsic arsenenes are indirect bandgap 1.602 eV non-magnetic semiconductors. All doped systems produce magnetic properties, and Mn-doped (Mn–C and Mn–N co-doped) monolayer arsenene system becomes a half-metal (HM) ferromagnet with 100% spin polarization and can be used in spintronic devices. The Mn–B co-doped system exhibits dilute magnetic semiconductor properties compared to intrinsic arsenene, and both Mn–O and Mn–F co-doped systems exhibit metallic properties. There is a strong charge transfer in the co-doped system, where all Mn atoms lose electrons and all X (X = B, C, N, O, and F) atoms gain electrons. Comparing the formation energies, the formation energies are significantly reduced after doping, where the Mn–N co-doped system has the lowest formation energy, indicating the most stable structure. The Mn–O co-doped monolayer arsenene system has the highest static dielectric constants ε1(0) and ε2(0). The doped system has a significant red shift at the edge of the absorption band and the range of the absorption spectrum is broadened. The reflectance of intrinsic arsenene to light at 6–10 eV is much greater than that of the doped system.
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Zutic, I., Fabian, J., Das Sarma, S.: Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004). https://doi.org/10.1103/revmodphys.76.323
Lu, J., Kotov, N.A.: Chiromagnetic properties of semiconductor nanorods. Matter 2, 1089–1090 (2020). https://doi.org/10.1016/j.matt.2020.04.004
Yang, J., Zhang, S., Li, L., Wang, A., Zhong, Z., Chen, L.: Rationally designed high-performance spin filter based on two-dimensional half-metal Cr2NO2. Matter 1, 1304–1315 (2019). https://doi.org/10.1016/j.matt.2019.07.022
Shi, Z., Wang, M., Wu, J.: A spin filter transistor made of topological Weyl semimetal. Appl. Phys. Lett. 107 (2015). https://doi.org/10.1063/1.4930875
Liu, H., Kondo, H., Ohno, T.: Spintronic transport in armchair graphene nanoribbon with ferromagnetic electrodes: half-metallic properties. Nanoscale Res. Lett. 11 (2016). https://doi.org/10.1186/s11671-016-1673-5
Tao, X., Hao, H., Wang, X., Zheng, X., Zeng, Z.: Realizing stable fully spin polarized transport in SiC nanoribbons with dopant. Appl. Phys. Lett. 108 (2016). https://doi.org/10.1063/1.4953599
El Rhazouani, O., Zarhri, Z., Benyoussef, A., El Kenz, A.: Magnetic properties of the fully spin-polarized Sr2CrOsO6 double perovskite: a Monte Carlo simulation. Phys. Lett. A 380, 1241–1246 (2016). https://doi.org/10.1016/j.physleta.2016.02.003
Li, P., Cai, T.-Y.: Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect. Phys. Chem. Chem. Phys. 22, 549–555 (2020). https://doi.org/10.1039/c9cp05132e
Huan, S., Shi, X., Han, L., Su, H., Wang, X., Zou, Z., Yu, N., Zhao, W., Chen, L., Guo, Y.: Magnetotransport evidence for the nontrivial topological states in the fully spin-polarized Kondo semimetal CeBi. J. Alloy. Compd. 875 (2021). https://doi.org/10.1016/j.jallcom.2021.159993
Zhou, Z., Zhang, X., Guo, Y., Zhang, Y., Niu, X., Ma, L., Wang, J.: Ultralong lifetime for fully photogenerated spin-polarized current in two-dimensional ferromagnetic/nonmagnetic semiconductor heterostructures. Phys. Rev. B 103 (2021). https://doi.org/10.1103/PhysRevB.103.245411
Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A.A.: Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004). https://doi.org/10.1126/science.1102896
Ying-Ying, L., Bo, G., Ying, H., Bing-Kun, C., Jia-Yu, H.: Optoelectronic characteristics and application of black phosphorus and its analogs. Front. Phys. (2021). https://doi.org/10.1007/s11467-021-1052-2
Gao, Y.F., Wen, M.R., Wang, S.X., Yu, H., Zhang, X., Wu, F.G., Dong, H.F.: Two-dimensional arsenene polymorph beyond the auxetic foam: high mechanical sensitivity and large, negative NPR. Phys. Chem. Chem. Phys. 23, 3837–3843 (2021). https://doi.org/10.1039/d0cp05604a
Li, F., Wei, W., Lv, X., Huang, B., Dai, Y.: Evolution of the linear band dispersion of monolayer and bilayer germanene on Cu(111). Phys. Chem. Chem. Phys. 19, 22844–22851 (2017). https://doi.org/10.1039/c7cp03597g
Wu, X., Dai, J., Zhao, Y., Zhuo, Z., Yang, J., Zeng, X.C.: Two-dimensional boron monolayer sheets. Acs. NANO 6, 7443–7453 (2012). https://doi.org/10.1021/nn302696v
Kou, L., Ma, Y., Tan, X., Frauenheim, T., Du, A., Smith, S.: Structural and electronic properties of layered arsenic and antimony arsenide. J. Phys. Chem. C 119, 6918–6922 (2015). https://doi.org/10.1021/acs.jpcc.5b02096
Zhang, S., Yan, Z., Li, Y., Chen, Z., Zeng, H.: Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Angewandte Chemie-Int. Ed. 54, 3112–3115 (2015). https://doi.org/10.1002/anie.201411246
Ares, P., Pakdel, S., Palacio, I., Paz, W.S., Rassekh, M., Rodriguez-San Miguel, D., Aballe, L., Foerster, M., Ruiz del Arbol, N. Angel Martin-Gago, J., Zamora, F., Gomez-Herrero, J., Jose Palacios, J.: Few-layer antimonene electrical properties. Appl. Mater. Today 24 (2021). https://doi.org/10.1016/j.apmt.2021.101132
Kumar, A., Sachdeva, G., Pandey, R., Karna, S.P.: Optical absorbance in multilayer two-dimensional materials: graphene and antimonene. Appl. Phys. Lett. 116 (2020). https://doi.org/10.1063/5.0010794
Shi, Z., Zhang, H., Khan, K., Cao, R., Zhang, Y., Ma, C., Tareen, A.K., Jiang, Y., Jin, M., Zhang, H.: Two-dimensional materials toward Terahertz optoelectronic device applications. J. Photochem. Photobiol. C-Photochem. Rev. 51 (2022). https://doi.org/10.1016/j.jphotochemrev.2021.100473
Fu, J., Qiu, M., Bao, W., Zhang, H.: Frontiers in electronic and optoelectronic devices based on 2D materials. Adv. Electron. Mater. 7 (2021). https://doi.org/10.1002/aelm.202100444
Ju, J., Ma, J., Wang, Y., Cui, Y., Han, P., Cui, G.: Solid-state energy storage devices based on two-dimensional nano-materials. Energy Storage Mater. 20, 269–290 (2019). https://doi.org/10.1016/j.ensm.2018.11.025
Mao, L., Zhao, X., Wang, H., Xu, H., Xie, L., Zhao, C., Chen, L.: Novel two-dimensional porous materials for electrochemical energy storage: a minireview. Chem. Rec. 20, 922–935 (2020). https://doi.org/10.1002/tcr.202000052
Lan, C., Zhou, Z., Wei, R., Ho, J.C.: Two-dimensional perovskite materials: from synthesis to energy-related applications. Mater. Today Energy 11, 61–82 (2019). https://doi.org/10.1016/j.mtener.2018.10.008
Cao, X., Halder, A., Tang, Y., Hou, C., Wang, H., Duus, J.O., Chi, Q.: Engineering two-dimensional layered nanomaterials for wearable biomedical sensors and power devices. Mater. Chem. Front. 2, 1944–1986 (2018). https://doi.org/10.1039/c8qm00356d
Zhang, S., Hu, Y., Hu, Z., Cai, B., Zeng, H.: Hydrogenated arsenenes as planar magnet and Dirac material. Appl. Phys. Lett. 107 (2015). https://doi.org/10.1063/1.4926761
Mao, X., Zhu, L., Fu, A.: Arsenene, antimonene and bismuthene as anchoring materials for lithium-sulfur batteries: a computational study. Int. J. Quantum Chem. 121 (2021). https://doi.org/10.1002/qua.26661
Li, G., Zhao, Y., Zeng, S., Ni, J.: The realization of half-metal and spin-semiconductor for metal adatoms on arsenene. Appl. Surf. Sci. 390, 60–67 (2016). https://doi.org/10.1016/j.apsusc.2016.08.016
Zhou, R., Xu, N., Guo, R., Ling, G., Zhang, P.: Preparation of arsenene and its applications in sensors. J. Phys. D-Appl. Phys. 55 (2022). https://doi.org/10.1088/1361-6463/ac38e0
Tian, X.-H., Zhang, J.-M.: The electronic, magnetic and optical properties of single-layer CrS2 with vacancy defects J. Magn. Magn. Mater. 487 (2019). https://doi.org/10.1016/j.jmmm.2019.165300
Valencia, A.M., Caldas, M.J.: Single vacancy defect in graphene: Insights into its magnetic properties from theoretical modeling. Phys. Rev. B 96 (2017). https://doi.org/10.1103/PhysRevB.96.125431
Qin, Z., Liu, P., Feng, M., Zuo, X.: Ferrimagnetism of Ti-adsorbed graphene. IEEE Trans. Magn. 52 (2016). https://doi.org/10.1109/tmag.2015.2512850
Luo, M., Xu, Y.E., Shen, Y.H.: Structural and magnetic properties of transition metal-adsorbed MoS2 monolayer. J. Supercond. Novel Magn. 30, 2849–2854 (2017). https://doi.org/10.1007/s10948-017-4123-4
Wang, Y., Anh, P., Li, S., Yi, J.: Electronic and magnetic properties of transition-metal-doped monolayer black phosphorus by defect engineering. J. Phys. Chem. C 120, 9773–9779 (2016). https://doi.org/10.1021/acs.jpcc.6b00981
Jiang, X., Zhang, X., Xiong, F., Hua, Z., Wang, Z., Yang. S.: Room temperature ferromagnetism in transition metal-doped black phosphorous. Appl. Phys. Lett. 112 (2018). https://doi.org/10.1063/1.5022540
Xu, Z., Hou, Q., Guo, F., Jia, X., Li, C., Li, W.: Effects of strain on the optical and magnetic properties of Ce-doped ZnO. Curr. Appl. Phys. 18, 1465–1472 (2018). https://doi.org/10.1016/j.cap.2018.08.014
Zhang, M., Wang, X., Wang, X., Wang, Y., Wei, M., Ni, M.-Y.: Effect of strain on the magnetism of Fe-doped MoTe2 monolayer. Mod. Phys. Lett. B 33 (2019). https://doi.org/10.1142/s0217984919503044
Sun, M., Wang, S., Du, Y., Yu, J., Tang, W.: Transition metal doped arsenene: a first-principles study. Appl. Surf. Sci. 389, 594–600 (2016). https://doi.org/10.1016/j.apsusc.2016.07.091
Liu, M., Chen, Q., Huang, Y., Cao, C., He, Y.: A first-principles study of transition metal doped arsenene. Superlattices Microstruct. 100, 131–141 (2016). https://doi.org/10.1016/j.spmi.2016.09.014
Luo, M., Xu, Y.E., Song, Y.X.: Ab initio study on nonmetal and nonmagnetic metal atoms doped arsenene. JETP Lett. 106, 434–439 (2017). https://doi.org/10.1134/s0021364017190018
Choi, W.I., Jhi, S.-H., Kim, K., Kim, Y.-H.: Divacancy-nitrogen-assisted transition metal dispersion and hydrogen adsorption in defective graphene: a first-principles study. Phys. Rev. B 81 (2010). https://doi.org/10.1103/PhysRevB.81.085441
Sharma, D.K., Kumar, S., Auluck, S.: Magnetism by embedding 3d transition metal atoms into germanene. J. Phys. D-Appl. Phys. 51 (2018). https://doi.org/10.1088/1361-6463/aabf2e
Sun, X., Wang, L., Lin, H., Hou, T., Li, Y.: Induce magnetism into silicene by embedding transition-metal atoms. Appl. Phys. Lett. 106 (2015). https://doi.org/10.1063/1.4921699
Segall, M.D., Lindan, P.J.D., Probert, M.J., Pickard, C.J., Hasnip, P.J., Clark, S.J., Payne, M.C.: First-principles simulation: ideas, illustrations and the CASTEP code. J Phys-Condens Matter 14, 2717–2744 (2002). https://doi.org/10.1088/0953-8984/14/11/301
Perdew, J.P., Burke, K., Ernzerhof, M.: Comment on “Generalized gradient approximation made simple” - Reply. Phys. Rev. Lett. 80, 891–891 (1998). https://doi.org/10.1103/PhysRevLett.80.891
Zhang, G.-X., Reilly, A.M., Tkatchenko, A., Scheffler, M.: Performance of various density-functional approximations for cohesive properties of 64 bulk solids. New J. Phys. 20 (2018). https://doi.org/10.1088/1367-2630/aac7f0
Payne, M.C., Teter, M.P., Allan, D.C., Arias, T.A., Joannopoulos, J.D.: Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients. Rev. Mod. Phys. (1992). https://doi.org/10.1103/revmodphys.64.1045
Liu, Z., Li, X., Zhou, C., Hu, T., Zhang, L., Niu, R., Guan, Y., Zhang, N.: First-principles study of structural and electronic properties of substitutionally doped arsenene. Phys E-Low-Dimension Syst Nanostruct 119 (2020). https://doi.org/10.1016/j.physe.2020.114018
Fu B, Feng W, Zhou X and Yao Y (2017) Effects of hole doping and strain on magnetism in buckled phosphorene and arsenene. 2d Materials 4. https://doi.org/10.1088/2053-1583/aa6fa6
Wang, K. L., Li, J., Huang, Y., Lian, M. L., Chen, D. M.: Adsorption of NO gas molecules on monolayer arsenene doped with Al, B, S and Si: a first-principles study. Processes 7 (2019). https://doi.org/10.3390/pr7080538
Du, J., Xia, C., An, Y., Wang, T., Jia, Y.: Tunable electronic structures and magnetism in arsenene nanosheets via transition metal doping. J. Mater. Sci. 51, 9504–9513 (2016). https://doi.org/10.1007/s10853-016-0194-z
Wang, Y. P., Ji W.X., Zhang C.W, Li, P., Li, F., Ren, M.J., Chen, X.L., Yuan, M., Wang, P.J.: Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene. Sci. Rep. 6 (2016). https://doi.org/10.1038/srep20342
Song, Y., Li, D., Mi, W., Wang, X., Cheng, Y.: Electric field effects on spin splitting of two-dimensional van der Waals arsenene/FeCl2 heterostructures. J. Phys. Chem. C 120, 5613–5618 (2016). https://doi.org/10.1021/acs.jpcc.6b01062
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This work was supported by the National Natural Science Foundation of China (grant number 51371049), the Natural Science Foundation of Liaoning Province (grant number 20102173), the Educational Department of Liaoning Province (grant number LZGD2019003), and the Educational Department of Liaoning Province (grant number LJGD2019012).
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Jianlin He: investigation, methodology, validation, visualization, writing—original draft, writing—review and editing. Guili Liu: software, data curation, formal analysis, funding acquisition, investigation, methodology, project administration, resources, software, supervision. Guoying Zhang: writing—review and editing.
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He, J., Liu, G. & Zhang, G. Density-Generalized Theory Study of Electronic Structure, Magnetic, and Optical Properties of Mn-Doped and Mn-X (X = B, C, N, O, and F) Co-doped Arsenenes. J Supercond Nov Magn 35, 2963–2973 (2022). https://doi.org/10.1007/s10948-022-06354-x
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DOI: https://doi.org/10.1007/s10948-022-06354-x