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Optoelectronic characteristics and application of black phosphorus and its analogs

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Abstract

The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many two-dimensional materials, such as tellurene, antimonene, bismuthene, indium selenide and tin sulfide, have similar structures and properties to black phosphorus thus called black phosphorus analogs. In this review, we briefly introduce preparation methods of black phosphorus and its analogs, with emphasis on the method of mechanical exfoliation (ME), liquid phase exfoliation (LPE) and chemical vapor deposition (CVD). And their characterization and properties according to their classification of single-element materials and multi-element materials are described. We focus on the performance of passively mode-locked fiber lasers using BP and its analogs as saturable absorbers (SA) and demonstrated this part through classification of working wavelength. Finally, we introduce the application of BP and its analogs, and discuss their future research prospects.

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Acknowledgements

We acknowledge the financial support by the China Postdoctoral Science Foundation (No. 2019M651203), Science and Technology Project of the 13th Five-Year Plan of Jilin Provincial Department of Education (Nos. JJKH20190157KJ and JJKH20190169KJ), Jilin Province Science and Technology Development Plan Project (No. 20190201128JC), and Changchun Science and Technology Plan Project (No. 18SS008).

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Correspondence to Bo Gao.

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arXiv: 2102.13316. Special Topic: Black Phosphorus and Its Analogues (Eds. Xianhui Chen, Haibo Zeng, Han Zhang & Yuanbo Zhang). This article can also be found at http://journal.hep.com.cn/fop/EN/10.1007/s11467-021-1052-2.

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Li, YY., Gao, B., Han, Y. et al. Optoelectronic characteristics and application of black phosphorus and its analogs. Front. Phys. 16, 43301 (2021). https://doi.org/10.1007/s11467-021-1052-2

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