Abstract
The influences of Lu3+ doping on the structure and electrical properties of CaCu3Ti4O12 (CCTO) ceramics are systematically studied. We find that Lu3+ doping inhibits the grain growth of CCTO while the dielectric constant decreases firstly and then increases with the increase of Lu3+ content. The positron annihilation results indicate defect concentrations increase with the increment of Lu3+ content. At low Lu3+ doped level, the huge dielectric response of the samples mainly derives from the internal barrier layer capacitor (IBLC) effect while intrinsic polarization as defect dipoles makes more contribution at higher doped level. The dielectric loss is depressed due to the increase of cation vacancies and grain boundary resistivity. Good performances (high ε′ of ∼ 1.1 × 104 and low tanδ of ∼ 0.025) at 1 kHz are obtained in Ca0.85Lu0.15Cu3Ti4O12 sample. Moreover, the enhanced nonlinear electrical properties are associated with cation vacancy defects generated by Lu3+ doping in the GB region. These findings are helpful in exploring the physical nature of the dielectric properties of CCTO.
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This work is supported by Key scientific research projects in institutions of higher learning of Henan Province (Project Nos. 20A430033), as well as by Key Research & Development and promotion projects in Henan Province (Project Nos. 212102210485, 212102210132).
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Xue, R., Chen, Y., Li, T. et al. Effects of Lu3+ Doping on Microstructures and Electrical Properties of CaCu3Ti4O12 Ceramics. J Supercond Nov Magn 34, 3297–3309 (2021). https://doi.org/10.1007/s10948-021-05978-9
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DOI: https://doi.org/10.1007/s10948-021-05978-9