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Temperature Dependence of Renormalized Spin Susceptibility for Interacting 2D Electrons in Silicon

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Abstract

By using Shubnikov-de Haas oscillations in crossed magnetic fields, we measured the temperature dependence of the renormalized spin susceptibility \(\chi _{i}^{*}(T)\) for strongly interacting itinerant 2D electrons in silicon. The weak \(\delta \chi _{i}^{*}(T)\) dependence, only a few percent over the range T = (0.1 − 1) K, agrees qualitatively with the predicted interaction corrections. However, in strong in-plane magnetic fields, the χ ∗(T) dependence does not vanish or weaken as expected for the interaction corrections. We found that the susceptibility variations are correlated with the T-dependence of the density of itinerant electrons extracted from the magnetooscillation period. We conclude therefore that the \(\chi _{i}^{*}(T)\) dependence is affected by a T-dependent exchange of electrons between the subsystems of itinerant and localized electrons which are in thermodynamic equilibrium.

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Acknowledgements

The author acknowledges discussions with B. L. Al’tshuler, I. S. Burmistrov, A. V. Chubukov, A. M. Finkel’stein, D. L. Maslov, M. Reznikov, and A. Yu. Zyuzin. The work was supported in part by RFBR grant 15-02-07715 and NSF grant 0077825.

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Authors and Affiliations

  1. P.N. Lebedev Physical Institute of RAS, Moscow, 119991, Russia

    V. M. Pudalov

  2. National Research University Higher School of Economics, 101000, Moscow, Russia

    V. M. Pudalov

  3. Serin Physics Laboratory, Rutgers University, Piscataway, NJ, 08854, USA

    M. E. Gershenson

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  1. V. M. Pudalov
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  2. M. E. Gershenson
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Correspondence to V. M. Pudalov.

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Pudalov, V.M., Gershenson, M.E. Temperature Dependence of Renormalized Spin Susceptibility for Interacting 2D Electrons in Silicon. J Supercond Nov Magn 31, 723–726 (2018). https://doi.org/10.1007/s10948-017-4329-5

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  • DOI: https://doi.org/10.1007/s10948-017-4329-5

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