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First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction

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Abstract

We attempt to study the spin-dependent transport properties of a magnetic tunnel junction (MTJ) which consists of a magnesium oxide (MgO)-adsorbed SiCNT tunnel barrier in between two half-metallic ferromagnetic (HMF) CrO2 electrodes. The I–V characteristic curves for both parallel and anti-parallel magnetization states are obtained. The comparison of the results with other reported studies suggests that a very large value of tunnel magneto-resistance (TMR) and a perfect spin filtration is obtained majorly due to the adsorption of MgO molecules and also due to the use of HMF electrodes. For bias voltages above 0.4 V, a high TMR at ∼100% is obtained. The TMR is also high at ∼97.89% for lower bias voltages. Also, a perfect spin filtration of almost 100% is obtained at all bias voltages. These results suggest that this device can prove to be of significant use in spin valves, MRAMs, and other spintronics applications. The spin-dependent non-equilibrium transport properties are also investigated by analyzing the bias-dependent transmission coefficients.

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Authors and Affiliations

  1. National Institute of Technology, Kurukshetra, Haryana, India

    Garima Choudhary & Sudhanshu Choudhary

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  1. Garima Choudhary
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  2. Sudhanshu Choudhary
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Correspondence to Garima Choudhary.

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Choudhary, G., Choudhary, S. First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction. J Supercond Nov Magn 30, 2303–2308 (2017). https://doi.org/10.1007/s10948-017-4041-5

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  • DOI: https://doi.org/10.1007/s10948-017-4041-5

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