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First-principles study of spin transport in \(\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}\) magnetic tunnel junction

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Abstract

We report the spin transport in silicon carbide nanotube based magnetic tunnel junction with half-metallic-ferromagnet \(\hbox {CrO}_{2}\) as electrodes. The simulations based on first principles suggest high tunnel magnetoresistance \(\sim \)100 % at zero bias, TMR remains high at higher bias voltages. I–V characteristics show that spin current in parallel magnetic configuration is much higher than the spin current in anti-parallel configuration. Perfect spin-filtration effect is obtained for this structure. Transmission coefficients are also calculated to understand the spin and bias dependent non-equilibrium transport properties.

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References

  1. Yao, K.L., Min, Y., Liu, Z.L., Cheng, H.G., Zhu, S.C., Gao, G.Y.: First-principles study of transport of V doped boron nitride nanotube. Phys. Lett. A 372(34), 5609–5613 (2008)

    Article  MATH  Google Scholar 

  2. Bin Wang, Y., Zhu, W.R., Wang, J., Guo, H.: Spin-dependent transport in Fe-doped carbon nanotubes. Phys. Rev. B 75, 235415 (2007)

    Article  Google Scholar 

  3. Titus, E., Krishna, R., Grácio, J., Singh, M., Ferreira, A.L., Dias, R.G.: Carbon Nanotube Based Magnetic Tunnel Junctions (MTJs) for Spintronics Application. Electronic Properties of Carbon Nanotubes. Prof. Jose Mauricio Marulanda (Ed.), ISBN: 978-953-307-499-3, InTech (2011). doi:10.5772/16539

  4. Chakraverty, M., Kittur, H.M., Arun Kumar, P.: First principle simulations of various magnetic tunnel junctions for applications in magnetoresistive random access memories. IEEE Trans. Nanotechnol. 12(6), 971–977 (2013)

    Article  Google Scholar 

  5. Li, W., Xue, L., Abruna, H.D., Ralph, D.C.: Magnetic tunnel junctions with single-layer-graphene tunnel barriers. Phys. Rev. B 89(18), 184418 (2014)

    Article  Google Scholar 

  6. Zhao, B., Monch, I., Vinzelberg, H., Muhl, T., Schneider, C.M.: Spin-coherent transport in ferromagnetically contacted carbon nanotubes. Appl. Phys. Lett. 80, 3144 (2002)

    Article  Google Scholar 

  7. Baei, M.T., Peyghan, A.A., Moghimi, M., Hashemian, S.: Effect of gallium doping on electronic and structural properties (6,0) zigzag silicon carbide nanotube as a p-semiconductor. J. Clust. Sci. 23, 1119–1132 (2012)

  8. Bratkovsky, A.M.: Tunneling of electrons in conventional and half-metallic systems: towards very large magnetoresistance. Phys. Rev. B 56, 2344 (1997)

    Article  Google Scholar 

  9. Sughara, S., Tanaka, M.: A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84(13), 2307–2309 (2004)

    Article  Google Scholar 

  10. Choudhary, Sudhanshu, Qureshi, S.: Theoretical study on the effect of dopant positions and dopant density on transport properties of a BN co-doped SiC nanotube. Phys. Lett. A 377(5), 430–435 (2013)

    Article  Google Scholar 

  11. Atomistix, QuantumWise A/S, http://www.quantumwise.com

  12. Brandbyge, M., Mozos, J.-L., Ordejón, P., Taylor, J., Stokbro, K.: Density-functional method for nonequilibriun electron transport. Phys. Rev. B 65, 165401 (2002)

    Article  Google Scholar 

  13. Taylor, Jeremy, Guo, Hong, Wang, Jian: Ab initio modeling of quantum transport properties of molecular electronic devices. Phys. Rev. B 63, 245407 (2001)

    Article  Google Scholar 

  14. Soler, J.M., Artacho, E., Gale, J.D., García, A., Junquera, J., Ordejón, P., Sánchez-Portal, D.: The SIESTA method for ab initio order-N materials simulation. J. Phys. Condens. Matter 14(11), 2745–2779 (2002)

    Article  Google Scholar 

  15. Choudhary, Sudhanshu, Qureshi, S.: Theoretical study on transport properties of a BN co-doped SiC nanotube. Phys. Lett. A 375(38), 3382–3385 (2011)

    Article  Google Scholar 

  16. Yang, Y.T., Ding, R.X., Song, J.X.: Transport properties of boron-doped single-walled silicon carbide nanotubes. Phys. B Condens. Matter 406(2), 216–219 (2011)

    Article  Google Scholar 

  17. Gali, A.: Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes. Phys. Rev. B 73, 245415 (2006)

    Article  Google Scholar 

  18. Li, Z., Kosov, D.S.: Dithiocarbamate anchoring in molecular wire junctions: a first principles study. J. Phys. Chem. B 110(20), 9893–9898 (2006)

    Article  Google Scholar 

Download references

Acknowledgments

This study was funded by National Institute of Technology, Kurukshetra.

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  1. School of VLSI Design and Embedded Systems, National Institute of Technology Kurukshetra, Kurukshetra, India

    Sudhanshu Choudhary & Anurag Chauhan

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  1. Sudhanshu Choudhary
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  2. Anurag Chauhan
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Correspondence to Sudhanshu Choudhary.

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Choudhary, S., Chauhan, A. First-principles study of spin transport in \(\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}\) magnetic tunnel junction. J Comput Electron 14, 852–856 (2015). https://doi.org/10.1007/s10825-015-0725-x

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  • DOI: https://doi.org/10.1007/s10825-015-0725-x

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