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Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

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Abstract

We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 104 A/cm2 is estimated considering the effect of current pulse width.

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Authors and Affiliations

  1. Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, 152-8551, Japan

    J. Okabayashi, M. Watanabe, H. Toyao & J. Yoshino

  2. Quantum NanoElectronics Research Center, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, 152-8551, Japan

    T. Yamaguchi

Authors
  1. J. Okabayashi
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  2. M. Watanabe
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  3. H. Toyao
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  4. T. Yamaguchi
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  5. J. Yoshino
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Corresponding author

Correspondence to J. Okabayashi.

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Okabayashi, J., Watanabe, M., Toyao, H. et al. Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction. J Supercond Nov Magn 20, 443–446 (2007). https://doi.org/10.1007/s10948-007-0290-z

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  • DOI: https://doi.org/10.1007/s10948-007-0290-z

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