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Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures

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Abstract

We have fabricated a series of field-effect transistor structures with a thin (Ga,Mn)As channel with thickness t of 3.5, 4.0, 4.5, and 5.0 nm, and investigated the effect of electric-field E on their magnetic properties. The Curie temperature T C showed a clear dependence on the magnitude of E, and its controllable range became larger with decreasing t and reached 15 K for the device with t=3.5 nm, which corresponded to 32% of T C of the layer.

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Authors and Affiliations

  1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, 980-8577, Japan

    M. Endo, D. Chiba, Y. Nishitani, F. Matsukura & H. Ohno

  2. Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Kitamemachi 1-18, Aoba-ku, Sendai, 980-0023, Japan

    D. Chiba, F. Matsukura & H. Ohno

Authors
  1. M. Endo
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  2. D. Chiba
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  3. Y. Nishitani
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  4. F. Matsukura
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  5. H. Ohno
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Correspondence to H. Ohno.

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Endo, M., Chiba, D., Nishitani, Y. et al. Channel Thickness Dependence of the Magnetic Properties in (Ga,Mn)As FET Structures. J Supercond Nov Magn 20, 409–411 (2007). https://doi.org/10.1007/s10948-007-0242-7

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  • DOI: https://doi.org/10.1007/s10948-007-0242-7

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