HTSC copper oxides demonstrate phase separation with typical size of coherent areas from few to hundreds unit cells. Radiation leads to photo-doping of these materials, the domain structure and doping state of the main fracture change at the same time. As charge carrier concentration in CuO2 planes controls their degree of distortion (“buckling”), so radiation causes photo-deformation effect in considered materials. Photo-deformation effect has been investigated for Bi2Sr2Ca2Cu3O x with different oxygen content. It has been shown that radiation of both under-doped and optimally-doped samples leads to the increase of material fraction with optimally doped CuO2-planes due to charge exchange with reservoir block BiO x .
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References
C. Stockinger, W. Markowitsch, and W. Lang Phys. Rev. B 57, 8702 (1998).
S. G. Titova, D. O. Shorikov, V. F. Balakirev, J. T. S. Irvine, and I. Bryntse, Physica B 284–288, 1091 (2000).
P. H. Duvigneaud, C. De Boeck, and Y. F. Guo, Supercond. Sci. Technol. 11, 116 (1998).
A. C. Larson, and R. B. Von Dreele Lansce, MS-H805, Los Alamos National Laboratory, Los Alamos, 1986, NM 87545.
Sh. Shilshtein, and A. S. Ivanov, Fizika Tverdogo Tela (rus) 37, 3268 (1995).
ACKNOWLEDGMENT
The work is supported by RFBR, grant No. 02-03-32959.
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Titova, S. Photo-Deformation Effect in HTSC Copper Oxides. J Supercond 19, 59–61 (2006). https://doi.org/10.1007/s10948-005-0092-0
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DOI: https://doi.org/10.1007/s10948-005-0092-0