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Potential of a Class of Microchip Nd:Gd x Y1−x VO4 Crystal Lasers for Short Laser Pulse Generation

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Abstract

We report subnanosecond passively Q-switched Nd:Gd x Y1−x VO4 (x = 0, 0.18, 0.42, 0.51, 0.64, 1) microchip lasers. To the best of our knowledge, this is the first demonstration of subnanosecond mixed-vanadate-crystal microchip lasers. Compared with Nd:GdVO4 and Nd:YVO4 lasers, we obtain enhanced peak power by the microchip lasers proposed and elaborated. Using a Cr4+:YAG crystal with initial transmission of 77%, we achieve the shortest pulse duration of 588 ps, highest pulse energy of 30 μJ, and peak power of 48 kW.

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Authors and Affiliations

  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

    Shuo Han, Yanqing Liu, Fang Zhang, Ying Zhou, Huaijin Zhang, Zhengping Wang & Xinguang Xu

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  1. Shuo Han
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  2. Yanqing Liu
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  3. Fang Zhang
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  4. Ying Zhou
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  5. Huaijin Zhang
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  6. Zhengping Wang
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  7. Xinguang Xu
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Correspondence to Zhengping Wang.

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Han, S., Liu, Y., Zhang, F. et al. Potential of a Class of Microchip Nd:Gd x Y1−x VO4 Crystal Lasers for Short Laser Pulse Generation. J Russ Laser Res 36, 371–376 (2015). https://doi.org/10.1007/s10946-015-9512-1

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  • DOI: https://doi.org/10.1007/s10946-015-9512-1

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