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Transition-metal dichalcogenide heterostructure solar cells: a numerical study

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Abstract

We evaluate the tunneling short-circuit current density \(J_{TU}\) in a p–i–n solar cell in which the transition metal dichalcogenide heterostructure (\(\hbox {MoS}_2/\hbox {WS}_2\) superlattice) is embedded in the intrinsic i region. The effects of varying well and barrier widths, Fermi energy levels and number of quantum wells in the i region on \(J_{TU}\) are examined. A similar analysis is performed for the thermionic current \(J_{TH}\) that arises due to the escape and recapture of charge carriers between adjacent potential wells in the i-region. The interplay between \(J_{TU}\) and \(J_{TH}\) in the temperature range (300–330 K) is examined. The thermionic current is seen to exceed the tunneling current considerably at temperatures beyond 310 K, a desirable attribute in heterostructure solar cells. This work demonstrates the versatility of monolayer transition metal dichalcogenides when utilized as fabrication materials for van der Waals heterostructure solar cells.

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  1. Information Technology, Engineering and Environment, University of South Australia, Adelaide, 5095, Australia

    A. Thilagam

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Thilagam, A. Transition-metal dichalcogenide heterostructure solar cells: a numerical study. J Math Chem 55, 50–64 (2017). https://doi.org/10.1007/s10910-016-0669-9

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  • DOI: https://doi.org/10.1007/s10910-016-0669-9

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