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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

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Abstract

We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 \(\upmu \)m. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to \(\sim \)200 \(\upmu \)m with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.

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Acknowledgments

This work was supported by JSPS KAKENHI Grant Numbers 20244016, 25109005, and 25247020. The authors are grateful to Mitsubishi Heavy Industries for their technical support in the surface-activated wafer bonding.

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Authors and Affiliations

  1. Nagoya University, Nagoya, Aichi, 464-8602, Japan

    M. Hanaoka, H. Kaneda, S. Oyabu, M. Yamagishi, Y. Hattori, S. Ukai & K. Shichi

  2. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa, 252-5210, Japan

    T. Wada, T. Suzuki, K. Nagase, S. Baba & C. Kochi

  3. Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo, 153-8904, Japan

    K. Watanabe

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  1. M. Hanaoka
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  2. H. Kaneda
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  3. S. Oyabu
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  4. M. Yamagishi
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  5. Y. Hattori
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  6. S. Ukai
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  7. K. Shichi
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  8. T. Wada
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  9. T. Suzuki
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  10. K. Watanabe
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  11. K. Nagase
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  12. S. Baba
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  13. C. Kochi
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Correspondence to M. Hanaoka.

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Hanaoka, M., Kaneda, H., Oyabu, S. et al. Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy. J Low Temp Phys 184, 225–230 (2016). https://doi.org/10.1007/s10909-016-1484-1

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  • DOI: https://doi.org/10.1007/s10909-016-1484-1

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