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Vertical Transport in InAs/GaSb Superlattice at Low Temperatures

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Abstract

We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and the ionized impurity scattering in InAs/GaSb superlattices. Using the Finite Difference K.P method, we calculate the band structure of InAs/Gasb superlattices and then study the transport properties of these systems. The effects of several structural parameters such as layer thicknesses, interface roughness height, correlation length, and ion density are investigated for the vertical electron transport. Theoretical modeling results show that these two scattering mechanisms are important at low temperatures, and also in thin layer systems.

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Authors and Affiliations

  1. Research Institute for Applied Physics and Astronomy, University of Tabriz, 51665-163, Tabriz, Iran

    S. Safa & A. Asgari

  2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA, 6009, Australia

    A. Asgari

Authors
  1. S. Safa
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  2. A. Asgari
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Correspondence to S. Safa.

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Safa, S., Asgari, A. Vertical Transport in InAs/GaSb Superlattice at Low Temperatures. J Low Temp Phys 181, 223–233 (2015). https://doi.org/10.1007/s10909-015-1349-z

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  • DOI: https://doi.org/10.1007/s10909-015-1349-z

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