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Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures

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Abstract

We report studies of two key factors involved in the use of MnAs as a spin injector, namely, Mn diffusion and spin injection properties when it is grown on GaAs-based semiconductor heterostructures. Depth profile of Mn concentration in a sample consisting of a MnAs film grown on GaAs is investigated with time-of-flight secondary ion mass spectroscopy. The result shows that Mn diffusion into GaAs is negligible, unlike the case of Ga1−x Mn x As/GaAs, in which Mn diffusion is significant. Meanwhile, robust spin injection is observed with MnAs as a spin injector for a GaAs-based light emitting diode, persisting up to room temperature.

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Acknowledgements

This work was supported by NSF DMR1006286 and NSF ECCS 0824220.

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Author notes

  1. R. E. Goacher

    Present address: Department of Chemistry, Biochemistry, and Physics, Niagara University, NY, 14109, USA

  2. E. D. Fraser

    Present address: Intelligent Epitaxy Technology, Inc., 1250 E. Collins Blvd., Richardson, TX, 75081, USA

Authors and Affiliations

  1. Department of Physics, The University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA

    J. Kwon, E. D. Fraser, L. Schweidenback, A. H. Russ, J. B. Hatch, A. Petrou & H. Luo

  2. Department of Chemistry, The University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA

    R. E. Goacher & J. A. Gardella Jr.

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  1. J. Kwon
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Correspondence to H. Luo.

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Kwon, J., Goacher, R.E., Fraser, E.D. et al. Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures. J Low Temp Phys 169, 377–385 (2012). https://doi.org/10.1007/s10909-012-0674-8

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  • DOI: https://doi.org/10.1007/s10909-012-0674-8

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