The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The influence of the heat treatment at a temperature of 900°C and of the irradiation with Xe ions with an energy of 167 MeV and a fluence of 3·1014 cm–2 on the structure and photoluminescence of the formed systems has been found. In the case of the system ″InAs in SiO2″ the irradiation with Xe ions leads to an enhancement of the intensity and a broadening of the luminescence spectrum in the visible spectral region (550–750 nm). The ordering of the nanoclusters and their stretching along the path of the Xe ions in the SiO2 matrix has been found.
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N. D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N. N. Ledentsov, V. M. Ustinov, B. V. Volovik, Zh. I. Alferov, N. K. Polyakov, V. N. Petrov, V. A. Egorov, and G. E. Cirlin, Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate, Appl. Phys. Lett., 76, No. 19, 2677–2679 (2000).
G. E. Cirlin, N. K. Polyakov, V. N. Petrov, V. A. Egorov, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, R. Heitz, D. Bimberg, N. D. Zakharov, P. Werner, and U. Gösele, Heteroepitaxial growth of InAs on Si: The new type of quantum dots, Mater. Phys. Mech., 1, No. 1, 15–19 (2000).
F. Komarov, L. Vlasukova, W. Wesch, A. Kamarou, O. Milchanin, S. Grechnyi, A. Mudryi, and A. Ivaniukovich, Formation of InAs nanocrystals in Si by high-fluence ion implantation, Nucl. Instrum. Methods Phys. Res. B, 266, No. 16, 3557–3564 (2008).
F. F. Komarov, O. V. Milchanin, L. A. Vlasukova, V. Vesh, A. F. Komarov, and A. V. Mudryi, Ion-beam synthesis of InAs nanocrystals in crystalline silicon, Izv. Ross. Akad. Nauk, Ser. Fiz., 74, No. 2, 323–326 (2010).
F. Komarov, L. Vlasukova, O. Milchanin, A. Mudryi, B. Dunets, W. Wesch, and E. Wendler, Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis, Physica Status Solidi A, 209, No. 1, 148–152 (2012).
F. Komarov, L. Vlasukova, O. Milchanin, W. Wesch, E. Wendler, J. Zuk, and I. Parkhomenko, Ion-beam synthesis and characterization of narrow-gap A3B5 nanocrystals in Si: Effect of implantation and annealing regimes, Mater. Sci. Eng. B, 178, No. 18, 1169–1177 (2013).
F. F. Komarov, I. A. Romanov, L. A. Vlasukova, O. V. Milchanin, I. N. Parkhomenko, T. B. Kovaleva, O. V. Korolik, A. V. Mudryi, and E. Wendler, Optical and structural properties of silicon with ion-beam synthesized InSb nanocrystals, Zh. Prikl. Spektrosk., 83, No. 6, 906–912 (2016).
S. Pruchnal, S. Facsko, C. Baumgart, H. Schmidt, M. O. Liedke, L. Rebohle, A. Shalimov, H. Reuther, A. Kanjilal, A. Mücklich, M. Helm, J. Zuk, and W. Skorupa, n-InAs nanopyramids fully integrated into silicon, Nano Lett., 11, No. 7, 2814–2818 (2011).
R. Khelifi , M. Frégmaux, Y. Le Gall, D. Muller, G. Schmerber, and D. Mathiot, Ion beam synthesis of embedded III-As nanocrystals in silicon substrate, Physica Status Solidi C, 12, Nos. 1–2, 55–59 (2015).
A. A. Leino, F. Djurabekova, and K. Nordlund, Radiation effects in nanoclusters embedded in solids, Eur. Phys. J. B, 87, No. 10, 242–256 (2014).
F. F. Komarov, Nano- and microstructuring of solids by high-speed heavy ions, Usp. Fiz. Nauk, 187, No. 5, 465–504 (2017).
F. Komarov, L. Vlasukova, M. Greben, O. Milchanin, J. Zuk, W. Wesch, E. Wendler, and A. Togambaeva, Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis, Nucl. Instrum. Methods Phys. Res. B, 307, 102–106 (2013).
A. F. Komarov, F. F. Komarov, O. V. Milchanin, L. A. Vlasukova, I. N. Parkhomenko, V. V. Mikhailov, M. A. Mokhovikov, and S. A. Miskevich, Processes of formation of InAs nanoclusters in silicon by the method of high-dose ion implantation: experimental and modeling results, Zh. Tekh. Fiz., 85, No. 9, 77–85 (2015).
F. F. Komarov, O. V. Milchanin, V. A. Skuratov, M. A. Mokhovikov, A. Janse van Vuuren, J. N. Neethling, E. Wendler, L. A. Vlasukova, I. N. Parkhomenko, and V. N. Yuvchenko, Ion-beam formation and track modifi cation of InAs nanoclusters in silicon and silica, Izv. Ross. Akad. Nauk, Ser. Fiz., 80, No. 2, 165–169 (2016).
L. A. Vlasukova, F. F. Komarov, V. N. Yuvchenko, O. V. Milchanin, A. Yu. Didyk, V. A. Skuratov, and S. B. Kislitsyn, Novel nanoporous amorphous-silica-based material, Izv. Ross. Akad. Nauk, Ser. Fiz., 76, No. 5, 653–658 (2012).
F. F. Komarov, Defect formation and track formation in solids on irradiation with superhigh-energy ions, Usp. Fiz. Nauk, 173, No. 12, 1287–1318 (2003).
S. Yin, Z. Chong-hong, M. Yan-cheng, Z. Heng-qing, Z. Li-qing, G. Jie, Y. Yi-tao, and M. Yi-zhun, Structural and optical characterization of SiO2 under irradiation with swift heavy ions, Nucl. Instrum. Methods Phys. Res. B, 326, 68–71 (2014).
D. Beena, K. J. Lethy, R. Vinodkumar, A. P. Detty, V. P. Mahadevanpillai, and V. Ganesan, Photoluminescence in laser ablated nanostructured indium oxide thin fi lms, Optoelectron. Adv. Mater. — Rapid Commun., 5, No. 1, 1–11 (2011).
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 92, No. 2, pp. 527–535, March–April, 2019.
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Komarov, F.F., Milchanin, O.V., Parkhomenko, I.N. et al. Influence of the Irradiation with High-Energy Xe Ions on the Structure and Photoluminescence of Silicon and Silica with InAs Nanoclusters. J Eng Phys Thermophy 92, 508–515 (2019). https://doi.org/10.1007/s10891-019-01958-y
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DOI: https://doi.org/10.1007/s10891-019-01958-y