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Design of semiconductor materials for electronics. Segment of the technological process: Annealing of the base substrate and formation of a nanostructure of dopants

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Journal of Engineering Physics and Thermophysics Aims and scope

For one production segment of designing semiconductor materials with given electrophysical properties, computer simulation of a number of basic technological physicochemical processes has been performed. With the use of high-resolution algorithms, the dynamics of thermal oxidation of the base material (silicon) and the evolution of the SiO2/Si and SiO2/O2 oxide film interfaces have been investigated. Simulation of the process of segregation of the acceptor and donor dopants (boron and phosphorus) in the base material at the SiO2/ Si oxidation wave front has been performed. For the “trench”-type geometry of the substrate surface, the distributions of boron and phosphorus concentrations have been obtained. It has been shown that the uniform (at the initial instant of time) distribution of dopant concentrations in the base material transforms to a distribution of narrowly-localized (of width about 65 nm) high-intensity peaks. Such nanostructures of donor and acceptor impurities in the substrate provide the required semiconductor electrophysical properties of the material.

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  1. Institute of Computational Mathematics and Mathematical Geophysics, Siberian branch of the Russian Academy of Sciences, 6 Lavrent’ev Ave., Novosibirsk, 630060, Russia

    G. A. Tarnavskii

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  1. G. A. Tarnavskii
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Correspondence to G. A. Tarnavskii.

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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 5, pp. 994–1004, September–October, 2008.

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Tarnavskii, G.A. Design of semiconductor materials for electronics. Segment of the technological process: Annealing of the base substrate and formation of a nanostructure of dopants. J Eng Phys Thermophy 81, 1038–1049 (2008). https://doi.org/10.1007/s10891-009-0105-0

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  • DOI: https://doi.org/10.1007/s10891-009-0105-0

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