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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density

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Abstract

Cadmium telluride (CdTe) (211) epitaxial layers were grown on GaAs (211) substrates. These CdTe layers were annealed under tellurium overpressure at different annealing temperatures to optimize conditions for better crystal quality and surface roughness. Tellurium overpressure was calculated using thermodynamical equations and utilized during the growth of the CdTe epitaxial layer by MBE. It was found that crystal quality improved, which manifested in the reduction of XRD peak full width at half maximum (FWHM) from ~ 150 to ~ 70 arcsec, and observation of fivefold reduction in dislocation defect density. Annealing conditions were optimized with a tradeoff between crystal quality and surface roughness. The activation energy of β-dislocations in CdTe epitaxial layers was determined to be Ea = 1.05 ± 0.2 eV. HRXRD FWHM ~ 55 arcsec was obtained for 10-μm thick CdTe buffer layer. The large area (3 in. dia) high crystal quality (HRXRD FWHM ~ 70 arcsec) HgCdTe epitaxial layers were grown on CdTe/ GaAs substrates.

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Acknowledgements

The authors thank the Director, Solid State Physics Laboratory for encouraging and consistent support and permission to publish this work. The authors thank Mr. Sanjay Kumar and Satyadhari Yadav for help in MBE experiments and Ms. Monika Kumari and Mrs. Garima for characterization measurements.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Timarpur, New Delhi, India

    Subodh Tyagi, Anshu Goyal, Sovinder Singh Rana, Udai Ram Meena, Puspashree Mishra, Rakesh Kumar Pandey, Sandeep Dalal, Akhilesh Pandey, Arun Kumar Garg & Shiv Kumar

  2. Department of Physics, Indian Institute of Technology Delhi, New Delhi, India

    Subodh Tyagi & Rajendra Singh

  3. DRDO HQ, Annexe, Metcalfe House, New Delhi, India

    Shiv Kumar

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  1. Subodh Tyagi
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Contributions

All authors contributed to the study conception and design. Arun Kumar Garg, Shiv Kumar, Sovinder Singh Rana, and Udai Ram Meena contributed in material preparation. Material characterization and data collection were done by Sandeep Dalal and Akhilesh Pandey, and analysis was performed by Anshu Goyal, Puspashree Mishra, Rakesh Pandey, and Rajendra Singh. The first draft of the manuscript was written by Subodh Tyagi and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Subodh Tyagi.

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Tyagi, S., Goyal, A., Rana, S.S. et al. Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density. J Mater Sci: Mater Electron 35, 982 (2024). https://doi.org/10.1007/s10854-024-12724-z

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