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Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient

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Abstract

In this study, we have successfully used radio-frequency (RF) sputtering to sputter the Tb4O7 passivation layers on silicon (Si) substrates. The impact of different RF powers and durations on structural, morphological, compositional, and optical characteristics was investigated via different characterization systems. The grazing incidence X-ray diffraction (GIXRD) analysis has verified the formation of all the studied samples (A, B, C, and D) sputtered at A (80 W/30 min and then raised to 100 W/15 min), B (80 W/30 min and then raised to 100 W/35 min), C (80 W/30 min and then raised to 100 W/55 min), and D (100 W/45 min), respectively. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to analyze the surface morphology of the investigated samples. Sample (C) exhibited larger grain sizes and higher surface roughness of 2.33 nm. The band gap energy (ED) values were evaluated by applying the Kubelka–Munk (KM) approach for all the studied samples, and the obtained values were within a range between 2.29 and 2.53 eV. Previous research has shown that the Tb4O7 thin film sputtered on a Si substrate for 45 min using the RF power (110 W) and annealed for 900 °C in argon (Ar) ambient resulted in the formation of crystalline Tb4O7 phase without clear explanation. This motivated us to conduct this study to observe the influence of different RF power and durations as well as determine the best RF power for the formation of the best Tb4O7 passivation layer.

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Acknowledgements

The authors would like to thank the Institute of Nano Optoelectronics Research and Technology (INOR) and the Nano Optoelectronics Research and Technology Laboratory (NOR Lab), School of Physics at Universiti Sains Malaysia (USM) for supporting this research and providing the appropriate research environment. Our gratitude also goes to the financial support from the Ministry of Higher Education Malaysia for the Fundamental Research Grant Scheme (FRGS) with Project Code (Grant No. FRGS/1/2023/STG07/USM/02/1), USM account code: (Grant No. 203.CINOR.6712149).

Funding

Funding was provided by Ministry of Higher Education, Malaysia (Grant No. FRGS/1/2023/STG07/USM/02/1).

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Authors and Affiliations

  1. Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, USM, 11800, Penang, Malaysia

    Abubakar A. Sifawa, Sabah M. Mohammad, Way Foong Lim, Mundzir Abdullah, Suvindraj Rajamanickam & Shireen Mohammed Abed

  2. Department of Physics, Sokoto State University, Sokoto, SSU, Sokoto, 852101, Nigeria

    Abubakar A. Sifawa

  3. Department of Physics, Sule Lamido University Kafin-Hausa, Kafin-Hausa, Jigawa State, Nigeria

    A. Muhammad

  4. Department of Physics, College of Education for Pure Science, University of Anbar, Ramadi, Iraq

    Shireen Mohammed Abed

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  1. Abubakar A. Sifawa
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Contributions

Abubakar A. Sifawa: Conceptualization, Methodology, Investigation, Data collection, Software, Writing—original draft. Sabah M. Mohammad: Conceptualization, Methodology, Visualization, Writing—Review & Editing, Validation, Funding, Supervision. A. Muhammad: Methodology, Visualization, Review & Editing, Validation, Supervision. Way Foong Lim: Reviewing. Mundzir Abdullah, Suvindraj Rajamanickam, and Shireen Mohammed Abed: Data collection and useful discussions. Abubakar A. Sifawa, Sabah M. Mohammad, A. Muhammad, Way Foong Lim, Mundzir Abdullah, Suvindraj Rajamanickam, and Shireen Mohammed Abed: We certify that all mentioned authors have read and approved the article and that no additional individuals meet the requirements for authorship but are not listed. We also certify that all of us have authorized the manuscript's authorship order. We realize that the Corresponding Author is the exclusive point of contact for the Editorial Process and is in charge of communicating with the Editors.

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Correspondence to Abubakar A. Sifawa or Sabah M. Mohammad.

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Sifawa, A.A., Mohammad, S.M., Muhammad, A. et al. Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient. J Mater Sci: Mater Electron 35, 945 (2024). https://doi.org/10.1007/s10854-024-12717-y

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