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Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations

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Abstract

The γ-ray total dose radiation effects on HfO2-based ferroelectric thin-film memories with various configurations were investigated. Electrical characteristics such as I–V, P–V, C–V, εr–f, and fatigue properties of different capping electrodes, and diverse substrates of HfO2-based ferroelectric thin films were quantified before and after the radiation. It was found from I–V characteristics of all configurations that I increases with the voltage in the range of 0 to the forward coercive voltage (Vc+), then it exhibited a reduction above Vc+, after a dose of 1 Mrad (Si), which indicated a weakened built-in electric field or a decreased depolarization field was induced by the ionizing radiation. The P–V and C–V of all the configurations displayed a decrease after the radiation tests due to an enhanced pinned effect of switchable domains. The attenuation in εr–f curves further certified the enhanced pinned effect of such configurations. A competitive relationship between the enhanced pinned effect and weakened built-in electric field was proposed to explain the performance evolution during the ionizing radiation. This work will be useful to better understand the radiation mechanism of HfO2-based ferroelectric thin-film memories.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request. The data that support the findings of this study are available within the article and its supplementary material.

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Funding

The authors would like to thank the financial support from the Chongqing Municipal Education Commission Science and Technology Research Program Youth Project (KJQN202101423 and KJQN202301414).

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Authors and Affiliations

  1. Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Yangtze Normal University, Chongqing, 408100, China

    Wanli Zhang, Guangliang Wan, Yanrui Lin, Junxiong Leng, Hongfei Wei, Lian Cui, Guangzhao Wang & Yanhu Mao

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  1. Wanli Zhang
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  2. Guangliang Wan
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  3. Yanrui Lin
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  4. Junxiong Leng
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  6. Lian Cui
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  7. Guangzhao Wang
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  8. Yanhu Mao
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Contributions

WZ and YM proposed the topic of this work. Material preparation, data collection and analysis were performed by GW, YL, JL, and HW. WZ and YM wrote the first draft of the manuscript. GW and YM participated in discussion and gave some valuable suggestions. LC and GW and revised the manuscript before submission.

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Correspondence to Wanli Zhang or Yanhu Mao.

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Zhang, W., Wan, G., Lin, Y. et al. Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations. J Mater Sci: Mater Electron 35, 296 (2024). https://doi.org/10.1007/s10854-024-12033-5

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