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Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors

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Abstract

The behavior of ferroelectric thin film capacitors under radiation environments is significant for the development of rad-hard ferroelectric random access memory (FeRAM). Here, we fabricated the ferroelectric thin film capacitors with 12-nm-thick HfxZr1−xO2 (HZO) and investigated the total ionizing dose (TID) effects of 60Co γ-rays radiation on them. It is found that after 60Co γ rays radiation with a total dose as high as 10 Mrad (Si), the hysteresis loops of the HZO ferroelectric thin film capacitors slightly shift to the positive bias direction, and the remanent polarization decreases by 5%. Besides, negligible changes in surface morphology, leakage current density, relative dielectric constant, dielectric loss, endurance and retention characteristics are observed. These results suggest that the HZO ferroelectric thin film capacitors have great potential in the application for highly rad-hard FeRAM.

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Acknowledgements

Authors gratefully acknowledge the supports of the National Natural Science Foundation of China (Grant No. 61504115), the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Grant No. SKLIPR1513), and the Hunan Provincial Key Research and Development Plan (No. 2017GK2040).

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  1. Qi Sun and Jiajia Liao are co-first authors.

Authors and Affiliations

  1. Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, Hunan, China

    Qi Sun, Jiajia Liao, Qiangxiang Peng, Binjian Zeng, Jie Jiang, Min Liao & Yichun Zhou

  2. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan, 411105, Hunan, China

    Qi Sun, Jiajia Liao, Qiangxiang Peng, Binjian Zeng, Jie Jiang, Yuandong Luo, Min Liao, Lu Yin & Yichun Zhou

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Sun, Q., Liao, J., Peng, Q. et al. Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors. J Mater Sci: Mater Electron 31, 2049–2056 (2020). https://doi.org/10.1007/s10854-019-02724-9

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