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N-type and P-type SnOx thin films based MOX gas sensor testing

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Abstract

In this article, n-type and p-type SnOx thin films are deposited using the same precursor with a simple chemical method of spray pyrolysis on the top of the fabricated MOX gas sensor at T = 350 ℃ and 500 ℃ respectively, without any post-deposition annealing step. The deposited films were investigated using the following characterization methods. X-ray diffraction revealed that the deposited n-type SnO2 thin films have a tetragonal rutile structure and in p-type SnO we identified two phases, a tetragonal SnO and orthorhombic SnO. Atomic force microscopy (AFM) indicates that films are homogenous and uniform within a scanned area of 334 nm with a small grain size of 10–15 nm. The performance of the fabricated sensors was performed by electrical characterization and sensing behavior under different concentrations of ethanol C = 7000 ppm, 3500 ppm, 1200 ppm, 600 ppm, and 300 ppm, at an operating temperature Top = 250 ℃ and RH 50%. The evolution under gases showed a higher response for p-type SnO as compared to n-type SnO2.

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Authors and Affiliations

  1. P-MEMS /DMN, Centre de Développement des Technologies Avancées (CDTA), Cité du 20 août 1956 Baba Hassen, BP, 16081, Alger, Algeria

    Sidi Mohammed Merah & Yamna Bakha

  2. Centre de Recherche en Technologie des Semi-Conducteur pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140. 7 Merveilles, Alger, Algeria

    Abdelkader Djelloul

Authors
  1. Sidi Mohammed Merah
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  2. Yamna Bakha
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  3. Abdelkader Djelloul
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Contributions

YB directed the project, all authors contributed to the study. Materials preparation conception and design; YB, SMM and AD performed the experiments. YB took the lead in writing the manuscript. All authors provided critical feedback and helped shape the research. All authors have read and agreed to the published version of the manuscript.

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Correspondence to Yamna Bakha.

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Merah, S.M., Bakha, Y. & Djelloul, A. N-type and P-type SnOx thin films based MOX gas sensor testing. J Mater Sci: Mater Electron 35, 250 (2024). https://doi.org/10.1007/s10854-024-11997-8

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