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Enhanced photoluminescence of InP@ZnS quantum dots induced by increasing the indium myristate-to-tris(trimethylsilyl)phosphine molecular precursors ratio

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Abstract

The synthesis and characterization of InP@ZnS quantum dots (QDs) synthesised by a one-step chemical method without injection of hot precursors are presented. The effect of the ratio of indium myristate-to-tris(trimethylsilyl)phosphine (\(\text{I}\text{n}{\left(\text{M}\text{A}\right)}_{\text{x}}/\text{P}{\left(\text{T}\text{M}\text{S}\right)}_{3}\)) molecular precursors on the structural and optical properties of the QDs were analysed. Using X-ray diffraction was demonstrated that the InP@ZnS QDs have a zinc blende crystalline phase, as was confirmed by High resolution Transmission electron microscope, and the particle sizes were found to range between 3.75 and 9.72 nm with increasing molecular precursor ratio. The observed colour variation of the QDs from yellow to green in toluene is due to the quantum confinement effect, which occurs when the nanocrystal size is smaller than the Bohr exciton radius. The QDs bandgap energy, determined by the absorbance spectroscopy, was found to depend on the \(\text{I}\text{n}{\left(\text{M}\text{A}\right)}_{\text{x}}\) concentration, ranging from 2.90 to 3.21 eV. As the \(\text{I}\text{n}{\left(\text{M}\text{A}\right)}_{\text{x}}/\text{P}{\left(\text{T}\text{M}\text{S}\right)}_{3}\) ratio increases, \(\text{I}\text{n}\text{P}@\text{Z}\text{n}\text{S}\) quantum dots exhibit enhanced photoluminescence due to passivation effects, which is redshifted from 2.91 to 2.19 eV. The temperature-dependent photoluminescence was measured in the range of 20 to 300 K, in which was observed that the photoluminescent bands did not follow the Varshni equation. The obtained results contribute to the understanding of the synthesis and physical properties of \(\text{I}\text{n}\text{P}@\text{Z}\text{n}\text{S}\) QDs, which have potential applications in various fields, such as photovoltaics, bioimaging, and sensing.

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Acknowledgements

One of the authors would like to thank the Doctoral Program in Advanced Technology of the UPIITA-IPN as well as the CONAHCyT (Scholarship No. 902515). Another thanks the CONAHCyT postdoctoral program and the CINVESTAV Physics Department for their invaluable support.

Funding

This work is not financially supported. The authors have no relevant financial or non-financial interests to disclose.

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Authors and Affiliations

  1. Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional 2580. La Laguna Ticomán, 07340, Ciudad de México, México

    Josefina Águila-López

  2. Centro Tlaxcala de Biología de la Conducta, Universidad Autónoma de Tlaxcala, Km 1.5 de la Carretera Tlaxcala-Puebla, S/N. La Loma Xicohténcatl, 90070, Tlaxcala, Tlaxcala, México

    Marisel Sánchez-Rivera

  3. Universidad Popular Autónoma del Estado de Puebla, 17 Sur, 901, Barrio de Santiago, 72410, Puebla, Puebla, México

    José Saúl Arias-Cerón

  4. Depto. de Física, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, San Pedro Zacatenco, Gustavo A. Madero, 07360, Ciudad de México, México

    Oscar Secundino-Sánchez

  5. Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex- Hacienda de San Juan Molino, Km 1.5 de la Carretera Estatal Santa Inés Tecuexcomac-Tepetitla., 90700, Tepetitla, Tlaxcala, México

    José Francisco Sánchez-Ramírez & Joel Díaz-Reyes

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  1. Josefina Águila-López
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Contributions

JDR and JFSR were responsible for conceptualization, methodology, data curation, writing—review and editing, visualization and supervision. Material preparation, data collection, and analysis were performed by JAL, MSR, JSAC, and OSS. The first draft of the manuscript was written by JDR and JSAC have equal contributions in reviewing the manuscript. All authors have read and approved the final manuscript.

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Correspondence to Joel Díaz-Reyes.

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Águila-López, J., Sánchez-Rivera, M., Arias-Cerón, J.S. et al. Enhanced photoluminescence of InP@ZnS quantum dots induced by increasing the indium myristate-to-tris(trimethylsilyl)phosphine molecular precursors ratio. J Mater Sci: Mater Electron 35, 222 (2024). https://doi.org/10.1007/s10854-024-11994-x

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